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BZM55C12BS PDF预览

BZM55C12BS

更新时间: 2024-02-11 01:34:36
品牌 Logo 应用领域
RECTRON 稳压二极管齐纳二极管测试局域网
页数 文件大小 规格书
5页 151K
描述
SILICON PLANAR ZENER DIODE

BZM55C12BS 技术参数

是否Rohs认证:不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.63
Is Samacsys:N配置:SINGLE
二极管类型:ZENER DIODE最大动态阻抗:20 Ω
JESD-609代码:e0元件数量:1
最高工作温度:175 °C最大功率耗散:0.5 W
标称参考电压:12 V子类别:Voltage Reference Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
最大电压容差:5%工作测试电流:5 mA
Base Number Matches:1

BZM55C12BS 数据手册

 浏览型号BZM55C12BS的Datasheet PDF文件第2页浏览型号BZM55C12BS的Datasheet PDF文件第3页浏览型号BZM55C12BS的Datasheet PDF文件第4页浏览型号BZM55C12BS的Datasheet PDF文件第5页 
BZM55C-BS  
SERIES  
4.7V to 36V  
SILICON PLANAR ZENER DIODE  
FEATURES  
Zener Voltage Range 4.7 to 36 Volts  
LS-31 (Micro-melf) Glass Package  
*
*
MICRO-MELF  
(1.25)  
(1.20)  
.049  
.047  
DIA.  
.010 (0.26)  
.008 (0.21)  
R > 2.5  
Glass  
)
)
.083 (2.10  
.075 (1.90  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )  
RATINGS  
SYMBOL  
VALUE  
500  
UNITS  
mW  
Power Dissipation @ R  
Storage Temperature  
Junction Temperature  
< 300 OC/W  
P
D
th (j-a)  
-65 to +175  
OC  
T
stg  
OC  
T
J
175  
THERMAL RESISTANCE  
500  
300  
Rth(j-a)  
Rth(j-l)  
K / W  
K / W  
From Junction to Ambient in free air  
Form Junction to Tie point (Note 1)  
2
Notes: 1. 35 um copper clad, 0.9mm copper area per electrode.  
VD 2007-11  
2. "Fully RoHS Compliant", "100% Sn Plating (Pb-free)".  

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