Very Low Power CMOS SRAM
2M X 8 bit
BS62LV1600
Pb-Free and Green package materials are compliant to RoHS
n FEATURES
ŸWide VCC operation voltage : 2.4V ~ 5.5V
n DESCRIPTION
The BS62LV1600 is a high performance, very low power CMOS
Static Random Access Memory organized as 2048K by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 1.5uA at 3.0V/25OC and maximum access time of 55ns at
3.0V/125OC.
ŸVery low power consumption :
VCC = 3.0V
VCC = 5.0V
Operation current : 46mA (Max.)at 55ns
2mA (Max.)at 1MHz
1.5uA (Typ.) at 25 OC
Standby current :
Operation current : 115mA (Max.)at 55ns
10mA (Max.)at 1MHz
Standby current :
ŸHigh speed access time :
6.0uA (Typ.) at 25OC
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2), and active LOW output
enable (OE) and three-state output drivers.
-55
-70
55ns (Max.) at VCC : 3.0~5.5V
70ns (Max.) at VCC : 2.7~5.5V
ŸAutomatic power down when chip is deselected
ŸEasy expansion with CE1, CE2 and OE options
ŸThree state outputs and TTL compatible
ŸFully static operation
The BS62LV1600 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS62LV1600 is available in JEDEC standard 44-pin TSOP II
and 48-ball BGA package.
ŸData retention supply voltage as low as 1.5V
n POWER CONSUMPTION
POWER DISSIPATION
STANDBY
Operating
PRODUCT
FAMILY
OPERATING
TEMPERATURE
PKG TYPE
(ICC, Max)
(IC CSB1, Typ.)
(ICCSB1, Max)
VCC=5.0V
1MHz fM ax.
VCC=3.0V
VCC=5.0V VCC=3.0V VCC=5.0V VCC=3.0V
1MHz
fM ax.
Automotive
Grade
BS62LV1600EA
BS62LV1600FA
TSOP II-44
6.0uA
1.5uA
220uA
120uA
10mA
115mA
2mA
46mA
-40OC to +125OC
BGA-48-0912
n PIN CONFIGURATIONS
n BLOCK DIAGRAM
A4
A3
A2
A1
A0
CE1
NC
NC
DQ0
DQ1
VCC
VSS
DQ2
DQ3
NC
A20
WE
A19
A18
A17
A16
A15
1
2
3
4
5
6
7
8
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
A5
A6
A7
OE
CE2
A8
NC
NC
DQ7
DQ6
VSS
VCC
DQ5
DQ4
NC
NC
A9
A10
A11
A12
A13
A14
A20
A13
A17
A15
A18
A16
A14
A12
A7
Address
Input
Memory Array
12
4096
Row
Decoder
9
10
11
Buffer
4096 x 4096
BS62LV1600EC
BS62LV1600EI
12
13
14
15
16
17
18
19
A6
A5
A4
4096
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
8
Data
Input
8
Column I/O
20
21
22
25
24
23
Buffer
Write Driver
Sense Amp
8
8
Data
Output
Buffer
512
1
2
3
4
5
6
Column Decoder
CE2
NC
A
B
NC
OE
A0
A1
A2
9
CE1
CE2
NC
NC
NC
A3
A5
A4
A6
CE1
NC
Control
Address Input Buffer
WE
OE
VCC
VSS
C
DQ0
DQ4
A11 A9 A8 A3 A2 A1 A0 A10 A1 9
D
E
F
VSS
VCC
DQ3
DQ1
DQ2
NC
A17
NC
A14
A7
DQ5
DQ6
NC
VCC
VSS
DQ7
A16
A15
G
H
NC
A20
A8
A12
A9
A13
A10
WE
A11
NC
A18
A19
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS62LV1600A
Revision 2.2A
1
Mar.
2006
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