Ultra Low Power/Voltage CMOS SRAM
64K X 16 bit
BSI
BS616UV1010
DESCRIPTION
FEATURES
The BS616UV1010 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 65,536 words by 16 bits and
operates from a wide range of 1.8V to 3.6V supply voltage.
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
Vcc = 2.0V
C-grade : 10mA (Max.) operating current
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.01uA and maximum access time of 150ns in 2V operation.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable(OE) and three-state output drivers.
The BS616UV1010 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
I- grade : 15mA (Max.) operating current
0.01uA (Typ.) CMOS standby current
C-grade : 15mA (Max.) operating current
I- grade : 20mA (Max.) operating current
0.02uA (Typ.) CMOS standby current
Vcc = 3.0V
• High speed access time :
-15
150ns (Max.) at Vcc = 3.0V
The BS616UV1010 is available in the JEDEC standard 44-pin TSOP
Type II and 48-pin mini-BGA.
• Input levels are CMOS-compatible
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
PRODUCT FAMILY
POWER DISSIPATION
SPEED
(ns)
STANDBY
Operating
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
PKG TYPE
(ICCSB1, Max)
(ICC, Max)
Vcc=3.0V
150
Vcc=3.0V
Vcc=2.0V
0.3uA
Vcc=3.0V
Vcc=2.0V
10mA
BS616UV1010EC
BS616UV1010AC
TSOP2-44
+0O C to +70O
-40 O C to +85O
C
C
1.8V ~ 3.6V
1.8V ~ 3.6V
0.5uA
1.5uA
15mA
20mA
BGA-48-0608
BS616UV1010EI
BS616UV1010AI
TSOP2-44
150
1uA
15mA
BGA-48-0608
PIN CONFIGURATIONS
BLOCK DIAGRAM
1
2
3
4
5
6
7
8
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A2
A1
A0
CE
DQ0
DQ1
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A13
Address
A15
18
512
9
10
11
DQ2
DQ3
VCC
A14
A12
A7
Input
Row
BS616UV1010EC
Memory Array
512 x 2048
12
BS616UV1010EI
GND
Buffer
13
14
15
16
17
18
19
20
Decoder
DQ4
DQ5
DQ6
DQ7
WE
A15
A14
A13
A6
A5
A4
A8
A9
A10
A11
2048
Data
Input
16
16
16
Column I/O
21
22
A12
NC
DQ0
NC
Buffer
.
.
.
.
.
.
.
.
Write Driver
Sense Amp
1
2
3
4
5
6
128
Data
Output
16
A
B
C
D
E
F
LB
OE
UB
A0
A3
A1
A4
A2
NC
IO0
IO2
VCC
VSS
IO6
IO7
NC
Buffer
Column Decoder
DQ15
IO8
CE
14
CE
WE
OE
UB
IO9
IO10
IO11
IO12
IO13
NC
A5
A6
IO1
IO3
IO4
IO5
WE
A11
Control
Address Input Buffer
VSS
VCC
IO14
IO15
NC
NC
NC
A14
A12
A9
A7
LB
A11 A9 A3 A2 A1
A0 A10
NC
A15
A13
A10
Vcc
Gnd
G
H
A8
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
Revision 2.3
R0201-BS616UV1010
1
Jan.
2004