High-performance Regulator IC Series for PCs
Termination Regulators
for DDR-SDRAMs
BD3539HFN, BD3539FVM, BD3539NUV
No.09030EBT03
●Description
BD3539HFN/FVM/NUV is a termination regulator compatible with JEDEC DDR-SDRAM, which functions as a linear power
supply incorporating an N-channel MOSFET and provides a sink/source current capability up to 1A respectively. A built-in
high-speed OP-AMP specially designed offers an excellent transient response. Requires 3.3 volts or 5.0 volts as a bias
power supply to drive the N-channel MOSFET. Has an independent reference voltage input pin (VDDQ) and an
independent feedback pin (VTTS) to maintain the accuracy in voltage required by JEDEC, and offers an excellent output
voltage accuracy and load regulation. Also has a reference power supply output pin (VREF) for DDR-SDRAM or a memory
controller. When EN pin turns to “Low”, VTT output becomes “Hi-Z” while VREF output is kept unchanged, compatible with
“Self Refresh” state of DDR-SDRAM.
●Features
1) Incorporates a push-pull power supply for termination (VTT)
2) Incorporates a reference voltage circuit (VREF)
3) Incorporates an enabler
4) Incorporates an undervoltage lockout (UVLO)
5) Employs HSON8 package :2.9×3.0×0.6(mm) : BD3539HFN
6) Employs MSOP8 package : 2.9×4.0×0.9(mm) : BD3539FVM
7) Employs VSON8 package : 2.0×3.0×0.6(mm) : BD3539NUV
8) Incorporates a thermal shutdown protector (TSD)
9) Operates with input voltage from 2.7 to 5.5 volts
10) Compatible with Dual Channel (DDR3)
●Applications
Power supply for DDR3- SDRAM
●Absolute maximum ratings
Parameter
BD3539HFN
BD3539FVM
BD3539NUV
Symbol
VCC
VEN
VTT_IN
VDDQ
ITT
Unit
V
Input Voltage
7*1*2
Enable Input Voltage
Termination Input Voltage
VDDQ Reference Voltage
Output Current
7*1*2
V
7*1*2
V
7*1*2
V
1
A
270.0*7
616.1*8
1770.5*9
1790.8*10
Power Dissipation1
Power Dissipation2
Power Dissipation3
Power Dissipation4
Operating Temperature Range
Storage Temperature Range
Pd1
630*3
1350*4
1750*5
-
437.5*6
mW
mW
mW
mW
℃
-
-
-
Pd2
Pd3
Pd4
Topr
-30~+100
-55~+150
+150
Tstg
℃
Maximum Junction Temperature
Tjmax
℃
*1 Should not exceed Pd.
*2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.
*3 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 0.2%), θja=198.4℃/W
*4 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 7%), θja=92.4℃/W
*5 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 65%), θja=71.4℃/W
*6 With Ta≧25℃ (With no heat sink) θja=286℃/W
*7 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate board (when don’t mounted on a heat radiation board ), θja=463℃/W
*8 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board,θja=202.9℃/W
*9 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 4-layers board, (copper foil area : 6.28mm2)
which has copper foil in each layer, θja=70.6℃/W
*10 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 4-layers board, (copper foil area : 5505mm2)
which has copper foil in each layer, θja=69.8℃/W
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2009.04 - Rev.B
1/12