ON Semiconductort
Low Noise Transistors
PNP Silicon
BC559B, C
BC560C
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
BC559 BC560
Unit
Vdc
V
CEO
V
CBO
V
EBO
–30
–30
–45
–50
Vdc
–5.0
Vdc
Collector Current — Continuous
I
C
–100
mAdc
1
2
3
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
COLLECTOR
1
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
q
JA
JC
R
83.3
q
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = –10 mAdc, I = 0)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
BC559
BC560
–30
–45
—
—
—
—
C
B
Collector–Base Breakdown Voltage
(I = –10 µAdc, I = 0)
V
V
Vdc
Vdc
BC559
BC560
–30
–50
—
—
—
—
C
E
Emitter–Base Breakdown Voltage
(I = –10 mAdc, I = 0)
–5.0
—
—
E
C
Collector Cutoff Current
(V = –30 Vdc, I = 0)
I
CBO
—
—
—
—
–15
–5.0
nAdc
µAdc
CB
E
(V = –30 Vdc, I = 0, T = +125°C)
CB
E
A
Emitter Cutoff Current
(V = –4.0 Vdc, I = 0)
I
—
—
–15
nAdc
EBO
EB
C
Semiconductor Components Industries, LLC, 2001
255
Publication Order Number:
September, 2001 – Rev. 0
BC559B/D