Datasheet > BAT750_1

BAT750_1

更新时间： 2022-12-20 10:08:26

品牌	Logo	应用领域
美台 - DIODES		/
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描述
0.75A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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BAT750_1 数据手册

SPICE MODEL: BAT750

BAT750

Lead-free

0.75A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features

Very Low Forward Voltage Drop

High Conductance

For Use in DC-DC Converter, PCMCIA,

and Mobile Telecommunications Applications

SOT-23

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

Lead Free/RoHS Compliant (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

TOP VIEW

Case: SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Polarity: See Diagram

Marking: K77 or K79 and Date Code, See Page 3

Weight: 0.008 grams (approximate)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

Value

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

I_FSM

P_d

RMS Reverse Voltage

Average Rectified Current

0.75

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load

5.5

Power Dissipation (Note 1)

350

286

°C/W

°C

qJA

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

T_j, T_STG

-55 to +125

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol Min

Typ

Max

Unit

Test Condition

I_R= 300uA

V_(BR)R

Reverse Breakdown Voltage (Note 2)

I_F= 50mA

I_F= 100mA

I_F= 250mA

I_F= 500mA

I_F= 750mA

I_F= 1000mA

I_F= 1500mA

280

310

350

420

490

540

650

225

235

290

340

390

420

475

Forward Voltage

V_F

V_R= 30V

I_R

Reverse Current (Note 2)

Total Capacitance

100

V_R= 0V, f = 1.0MHz

V_R= 25V, f = 1.0MHz

175

C_T

I_F= I_R= 100mA,

I_rr= 10mA. See figure 6.

t_rr

Reverse Recovery Time

Notes: 1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. No purposefully added lead.

DS30216 Rev. 10 - 2

1 of 3

BAT750

www.diodes.com

ã Diodes Incorporated

12 3

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