Datasheet > 存储 > EEPROM> AT28C010-12DK-SV

AT28C010-12DK-SV

更新时间： 2024-01-13 22:27:14

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
17页	230K
描述
Space 1-megabit (128K x 8) Paged Parallel EEPROMs

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数据手册

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AT28C010-12DK-SV 数据手册

Features

• Fast Read Access Time – 120 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 128 Bytes

– Internal Control Timer

• Fast Write Cycle Time

– Page Write Cycle Time – 10 ms Maximum

– 1 to 128-byte Page Write Operation

• Low Power Dissipation

AT28C010-12DK Mil

– 80 mA Active Current

– 300 µA CMOS Standby Current

Space

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 10⁴or 10⁵Cycles

1-megabit

(128K x 8)

Paged Parallel

EEPROMs

– Data Retention: 10 Years

• Operating Range: 4.5V to 5.5V, -55 to +125°C

• CMOS and TTL Compatible Inputs and Outputs

• Batch Tested for 10 Krad TID and 70 MeV Latch-up Capability

• JEDEC Approved byte-Wide Pinout

• 435 Mils Wide 32-Pin Flat Pack Package

Description

AT28C010-12DK

The AT28C010-12DK is a high-performance Electrically Erasable and Programmable

Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8

bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device

offers access times to 120 ns with power dissipation of just 440 mW. When the device

is deselected, the CMOS standby current is less than 300 µA.

The AT28C010-12DK is accessed like a Static RAM for the read or write cycle without

the need for external components. The device contains a 128-byte page register to

allow writing of up to 128 bytes simultaneously. During a write cycle, the address and

1 to 128 bytes of data are internally latched, freeing the address and data bus for

other operations. Following the initiation of a write cycle, the device will automatically

write the latched data using an internal control timer. The end of a write cycle can be

detected by DATA POLLING of I/O7. Once the end of a write cycle has been detected

a new access for a read or write can begin.

Preliminary

Atmel's 28C010 has additional features to ensure high quality in manufacturing. The

device utilizes internal error correction for extended endurance and improved data

retention characteristics. An optional software data protection mechanism is available

to guard against inadvertent writes. The device also includes an extra 128 bytes of

EEPROM for device identification or tracking.

Rev. 4259A–AERO–06/03

12 3 4 5 6 7...17

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