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Power Field-Effect Transistor, 17A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
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Power Field-Effect Transistor, 17A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN
一键下载