生命周期: | Contact Manufacturer | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.83 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.014 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 180 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
AP4407S | A-POWER | P-CHANNEL ENHANCEMENT MODE |
获取价格 |
|
AP4409AGEM | A-POWER | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
获取价格 |
|
AP4409AGEM-HF | A-POWER | TRANSISTOR POWER, FET, FET General Purpose Power |
获取价格 |
|
AP4409AGM-HF | A-POWER | Simple Drive Requirement, Low On-resistance |
获取价格 |
|
AP4409GEM | A-POWER | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
获取价格 |
|
AP4409GEP-HF | A-POWER | Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic |
获取价格 |