The Communications Edge TM
AH11
High Dynamic Range Dual Amplifier
Product Information
Product Features
Product Description
Functional Diagram
The AH11 is a high linearity amplifier for use in digital
communication systems. It combines low noise figure and
high intercept point into a low-cost SMT solution. This
device extends the linear efficiency advantages of WJ’s AH1
to higher power levels by combining two internally matched
die. This dual-amplifier configuration allows for the optimal
design of balanced or push-pull operation. The amplifier
can also be used for single-ended operation in each branch
of a diversity receive system.
• 150 – 3000 MHz
1
2
3
4
8
7
6
5
• +44 dBm OIP3
(balanced configuration)
• +48 dBm OIP3
(dual push-pull configuration)
• Single-ended performance:
13.5 dB Gain
2.7 dB Noise Figure
+21 dBm P1dB
A mature and reliable GaAs MESFET technology is
employed to maximize linearity while achieving low noise
figure. The package is a thermally enhanced lead-free/
green/RoHS-compliant SOIC-8 package thus allowing the
device to achieve an MTTF greater than 100 years at a case
temperature of 85 °C. All devices are 100% RF and DC
tested.
• Single +5 Volt Supply
• Lead-free/Green SOIC8 Pkg.
Function
Input (Amp 1)
Pin No.
1
2, 3, 6, 7,
Ground
Bottom Slug
Input (Amp 2)
Output (Amp 1)
Output (Amp 2)
4
5
8
Applications
• Mobile Infrastructure
• Defense / Homeland Security
• Fixed Wireless
Specifications (1) (Single-ended Performance) Typical Performance (Balanced Configuration)
Parameter
Frequency
S21
S11
S22
Units
MHz
dB
dB
dB
Typical
Parameter
Test Frequency
Gain
Units Min Typ Max
900
12.2
-10
-18
+46
4.1
1900
11.2
-14
-10
+44
2100
10.6
-10
-10
+45
5.6
MHz
dB
dB
dB
dBm
dBm
dB
mA
V
800
13.5
8
12.4
+37
120
Input Return Loss (2)
Output Return Loss
Output IP3 (3)
15
Output IP3
Noise Figure
Supply Bias
dBm
dB
+41
+21
2.7
150
+5
4.2
Output P1dB
Noise Figure
Operating Current Range
Supply Voltage
+5 V @ 300 mA
Test conditions: T = 25 ºC, in a tuned application circuit (shown on page 2)
180
Typical Performance (Dual P-P Configuration)
1. Test conditions unless otherwise noted: T = 25 ºC, Supply Voltage = +5 V, Frequency = 800 MHz,
50 Ω System, tested on each single-ended amplifier (there are two amplifiers in an AH11 package)
2. S21 and S11 can be improved in the band of interest with some slight input tuning.
3. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Slight OIP3
degradation of about 2 dB is expected to occur at lower temperatures (from 25 ºC to –40 ºC).
Parameter
Frequency
S21
Units
MHz
dB
Typical
900
13.4
-19
1900
11.9
-19
S11
dB
S22
dB
-12
-10
Output IP3
Noise Figure
Supply bias
dBm
dB
+48
3.4
+48
3.7
+5 V @ 600 mA
Test conditions: T = 25 ºC, in a tuned application circuit (shown on pages 3 and 4)
Absolute Maximum Rating
Ordering Information
Parameter
Rating
Part No.
Description
Operating Case Temperature
Storage Temperature
Supply Voltage
-40 to +85 °C
-55 to +125 °C
+6 V
AH11-G
High Dynamic Range CATV Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Package)
AH11BAL-PCB
AH11PP900-PCB
AH11PP1900-PCB
0.6-2.1GHz Eval Board, Balanced Configuration
0.9GHz Eval Board, Dual Push-Pull Configuration
1.9GHz Eval Board, Dual Push-Pull Configuration
RF Input Power (continuous)
Junction Temperature
4 dB above Input P1dB
+220 °C
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
Page 1 of 6 May 2006
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
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