是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DFN |
包装说明: | HVSON, | 针数: | 8 |
Reach Compliance Code: | unknown | 风险等级: | 5.69 |
高边驱动器: | YES | 接口集成电路类型: | HALF BRIDGE BASED MOSFET DRIVER |
JESD-30 代码: | S-PDSO-N8 | JESD-609代码: | e3 |
长度: | 3 mm | 湿度敏感等级: | NOT SPECIFIED |
功能数量: | 1 | 端子数量: | 8 |
最高工作温度: | 85 °C | 最低工作温度: | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | HVSON |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
峰值回流温度(摄氏度): | 260 | 认证状态: | COMMERCIAL |
座面最大高度: | 1 mm | 最大供电电压: | 13.2 V |
最小供电电压: | 4.15 V | 标称供电电压: | 12 V |
表面贴装: | YES | 温度等级: | OTHER |
端子面层: | MATTE TIN | 端子形式: | NO LEAD |
端子节距: | 0.5 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 断开时间: | 0.07 µs |
接通时间: | 0.04 µs | 宽度: | 3 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
ADP3110AKRZ | ADI | Dual Bootstrapped, 12 V MOSFET Driver with Output Disable |
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ADP3110AKRZ | ROCHESTER | HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, SOIC-8 |
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ADP3110AKRZ | ONSEMI | Dual Bootstrapped, 12 V MOSFET Driver with Output Disable |
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ADP3110AKRZ-RL | ADI | Dual Bootstrapped, 12 V MOSFET Driver with Output Disable |
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ADP3110AKRZ-RL | ONSEMI | Dual Bootstrapped, 12 V MOSFET Driver with Output Disable |
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ADP3110AKRZ-RL | ROCHESTER | HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, SOIC-8 |
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