生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | PEAK TURN-OFF CURRENT IS 1200A | 标称电路换相断开时间: | 80 µs |
配置: | SINGLE | 最大直流栅极触发电流: | 2000 mA |
最大直流栅极触发电压: | 0.9 V | JESD-30 代码: | O-CEDB-N2 |
通态非重复峰值电流: | 10500 A | 元件数量: | 1 |
端子数量: | 2 | 最大通态电流: | 670000 A |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 1340 A | 断态重复峰值电压: | 1800 V |
重复峰值反向电压: | 1800 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | END | 触发设备类型: | SYMMETRICAL GTO SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
WG12018R02 | IXYS | Gate Turn-Off SCR, 1800V V(DRM), 200V V(RRM), 1 Element |
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WG12018R03 | IXYS | Gate Turn-Off SCR, 1800V V(DRM), 300V V(RRM), 1 Element |
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WG12018R04 | IXYS | Gate Turn-Off SCR, 1800V V(DRM), 400V V(RRM), 1 Element |
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WG12018R05 | IXYS | Gate Turn-Off SCR, 1800V V(DRM), 500V V(RRM), 1 Element |
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WG12018R06 | IXYS | Silicon Controlled Rectifier, 1800 V, GATE TURN-OFF SCR |
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WG12018R07 | IXYS | Gate Turn-Off SCR, 1800V V(DRM), 700V V(RRM), 1 Element |
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