Datasheet > W7N2G16VH3SBI

W7N2G16VH3SBI

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
WEDC		/
页数	文件大小	规格书
13页	305K
描述
Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PITCH, PLASTIC, BGA-224

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W7N2G16VH3SBI 数据手册

W7NxxxVHxxBISx

White Electronic Designs

ADVANCED*

Secure Embedded SLC NAND SSD PBGA

FEATURES



Built in ATA/PCMCIA 2.1, and compact ﬂash 3.0



Storage Capacities:

4GBYTE and 8GBYTE**

Environment conditions:

interface capability

•

Hardware & software triggered security erase that

meets:***



•

Operating temperature: -40°C to 85°C

Storage temperature: -55°C to 125°C

•

NISPOM DoD 5220.22-M

NSA - 130-2



SLC Flash

Airforce AFSSI - 5020

Army AR380-19

•

3.3V single power supply

256 Bytes of attribute memory

Navy NAVSO P-5234-26

Power consumption



Page read operation

•

3.3V ± 10%

Page Program time: 200μs (Typ)

Block erase time: 1.5ms (Typ)

Program/Erase lockout during transition

Active mode: Read, Write, Erase operation:

95 mA (Typ), 150 (Max)

•

Sleep mode: 10 mA (Typ); TBD mA (Max)

Secure erase: 85 mA (Max) (4GB)

Data transfer rate: Up to 66MB/s UDMA mode 4

Up to 25MB/s PIO mode 6 or

MDMA mode 4



Interface modes



Sustained read: Up to 45 MBytes/s

•

PC card memory mode

Sustained write: Up to 30 MBytes/s with interleaving

Random read: Up to 35 MBytes/s

PC card I/O mode

True IDE mode



Random write: Up to 6 MBytes/s



Less than 1 Error in 10¹⁴bits read

MTBF > 4,000,000 hours

DESCRIPTION

High shock & vibration tolerance

W/E Endurance: 4,000,000 write/erase cycles

High performance

The W7NxxxVHxxBISx series embedded SLC NAND

SSD PBGA is based on ﬂash technology. This product is

constructed with 32bit RISC base controller and SLC NAND

ﬂash memory devices. They operate from a single 3.3 volt

power supply. Capacity ranges from 4GB to 8GB**.

•

Interface Transfer speed in PIO mode 6

Typical write: 30 MBytes/s in ATA PIO mode 6

Typical read: 45 MBytes/s in ATA PIO mode 6

* This product is under development, is not qualiﬁed or characterized and is subject to

change or cancellation without notice.

** 8GB capacity is TBD.

On card ECC up to 4 Bytes per 512 Byte data

sector



Dimensions:

*** This feature will not be available for sample production

•

27mm x 22mm x 2.60mm



Highly resistant to data corruption due to power loss

Single device connector free solution for embedded

environments

TABLE 1

Item

Size

4GB

Performance



Sophisticated wear leveling ﬁrmware

W7N2G16VHxxBISx

W7N4G16VHxxBISx

Enhanced reliability with a 1.27mm pitch; eutectic

tin-lead solder ball

3.0 to 3.60

8GB**



Same form, ﬁt and functionality as W7NxxxVHxxBI

with the following exceptions: M9 = EXTPWR and

L11 = EXTTRIG for secure erase

November 2009

Rev. 1

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

12 3 4 5 6 7...13

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与W7N2G16VH3SBI相关器件

型号	品牌	描述	获取价格	数据表
W7N2G16VH3SBIA	WEDC	Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT	获取价格
W7N2G16VH3SBIB	WEDC	Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT	获取价格
W7N2G16VH3SBIC	WEDC	Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT	获取价格
W7N2G16VH3SBID	WEDC	Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT	获取价格
W7N2G16VH3SBIE	WEDC	Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT	获取价格
W7N4G16VH1SBI	WEDC	Flash Memory Drive, IDE Compatible, CMOS, PBGA224, 27 X 22 MM, 2.60 MM HEIGHT, 1.27 MM PIT	获取价格

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