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VFT3045CBP PDF预览

VFT3045CBP

更新时间: 2022-09-12 11:29:21
品牌 Logo 应用领域
威世 - VISHAY 电池
页数 文件大小 规格书
4页 81K
描述
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

VFT3045CBP 数据手册

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New Product  
VFT3045CBP  
Vishay General Semiconductor  
Trench MOS Barrier Schottky Rectifier  
for PV Solar Cell Bypass Protection  
Ultra Low VF = 0.30 V at IF = 5.0 A  
FEATURES  
TMBS®  
ITO-220AB  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Solder bath temperature 275 °C max. 10 s, per  
JESD 22-B106  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
3
2
Halogen-free according to IEC 61249-2-21 definition  
1
VFT3045CBP  
PIN 1  
PIN 2  
TYPICAL APPLICATIONS  
For use in solar cell junction box as a bypass diode for  
protection, using DC forward current without reverse bias.  
PIN 3  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
2 x 15 A  
45 V  
VRRM  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
commercial grade  
IFSM  
200 A  
0.39 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 15 A  
TOP max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VFT3045CBP  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
45  
30  
15  
V
per device  
per diode  
(1)  
Maximum average forward rectified current (fig. 1)  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
200  
Isolation voltage from termal to heatsink, t = 1 min  
Operating junction and storage temperature range  
VAC  
1500  
V
TOP, TSTG  
- 40 to + 150  
°C  
Junction temperature in DC forward current  
without reverse bias, t 1 h  
(2)  
TJ  
200  
°C  
Notes  
(1)  
With heatsink  
(2)  
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test  
Document Number: 89369  
Revision: 27-Oct-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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