Datasheet > TTS3816B4E

TTS3816B4E

更新时间： 2022-11-26 02:18:26

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
8页	275K
描述
2M x 16Bit x 4 Banks synchronous DRAM

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TTS3816B4E 数据手册

.tec

TTS3816B4E

2M x 16Bit x 4 Banks synchronous DRAM

GENERAL DESCRIPTION

The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits,

fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of

system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and

programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system

applications.

FEATURES

• JEDEC standard 3.3V power supply

• LVTTL compatible with multiplexed address

• Four-banks operation

• MRS cycle with address key programs

-. CAS latency (2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock.

• Burst read single-bit write operation

• DQM for masking

• Auto & self refresh

• 64ms refresh period (4K cycle)

ORDERING INFORMATION

Part No.

Max Freq.

Interface

LVTTL

Package

TTS3816B4E-7

TTS3816B4E-6

TTS3816B4E-6A

TTS3816B4E-6B

TTS3816B4E-6C

TTS3816B4E-6D

TTS3816B4E-6E

100MHz 2-2-2

133MHz 3-3-3

100MHz 2-3-3

133MHz 2-3-2

133MHz 2-2-2

150MHz 3-3-3

166MHz 3-3-3

TSOP(II)

Revision_1.1

1 TwinMOS Technologies Inc. Sep. 2000

12 3 4 5 6 7 8

下载PDF

与TTS3816B4E相关器件

型号	品牌	描述	获取价格	数据表
TTS3816B4E-6	ETC	2M x 16Bit x 4 Banks synchronous DRAM	获取价格
TTS3816B4E-6A	ETC	2M x 16Bit x 4 Banks synchronous DRAM	获取价格
TTS3816B4E-6B	ETC	2M x 16Bit x 4 Banks synchronous DRAM	获取价格
TTS3816B4E-6C	ETC	2M x 16Bit x 4 Banks synchronous DRAM	获取价格
TTS3816B4E-6D	ETC	2M x 16Bit x 4 Banks synchronous DRAM	获取价格
TTS3816B4E-6E	ETC	2M x 16Bit x 4 Banks synchronous DRAM	获取价格