TIP3055
NPN SILICON POWER TRANSISTOR
Copyright © 1997, Power Innovations Limited, UK
DECEMBER 1970 - REVISED MARCH 1997
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Designed for Complementary Use with the
TIP2955 Series
SOT-93 PACKAGE
(TOP VIEW)
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90 W at 25°C Case Temperature
B
C
E
1
2
3
15 A Continuous Collector Current
Customer-Specified Selections Available
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
VCBO
VCER
VEBO
IC
100
V
V
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
70
7
V
Continuous collector current
15
A
Continuous base current
IB
7
90
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Ptot
Ptot
W
W
mJ
°C
°C
°C
3.5
2
½LIC
62.5
Tj
Tstg
TL
-65 to +150
-65 to +150
260
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies when the base-emitter resistance RBE = 100 W.
2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 W,
VBE(off) = 0, RS = 0.1 W, VCC = 10 V.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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