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TIP30 PDF预览

TIP30

更新时间: 2024-01-20 09:11:33
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管
页数 文件大小 规格书
6页 89K
描述
PNP SILICON POWER TRANSISTORS

TIP30 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.05最大集电极电流 (IC):1 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

TIP30 数据手册

 浏览型号TIP30的Datasheet PDF文件第2页浏览型号TIP30的Datasheet PDF文件第3页浏览型号TIP30的Datasheet PDF文件第4页浏览型号TIP30的Datasheet PDF文件第5页浏览型号TIP30的Datasheet PDF文件第6页 
TIP30, TIP30A,TIP30B, TIP30C  
PNP SILICON POWER TRANSISTORS  
Copyright © 1997, Power Innovations Limited, UK  
JULY 1968 - REVISED MARCH 1997  
Designed for Complementary Use with the  
TIP29 Series  
TO-220 PACKAGE  
(TOP VIEW)  
30 W at 25°C Case Temperature  
1 A Continuous Collector Current  
3 A Peak Collector Current  
1
2
3
B
C
E
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIP30  
-80  
TIP30A  
TIP30B  
TIP30C  
TIP30  
-100  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
V
-120  
-140  
-40  
TIP30A  
TIP30B  
TIP30C  
-60  
VCEO  
V
-80  
-100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
-5  
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
-1  
-3  
A
-0.4  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
30  
W
W
mJ  
°C  
°C  
°C  
2
2
½LIC  
32  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp £ 0.3 ms, duty cycle £ 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 W,  
VBE(off) = 0, RS = 0.1 W, VCC = -20 V.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

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