Datasheet > TIP122

TIP122

更新时间： 2024-02-04 13:50:27

品牌	Logo	应用领域
伯恩斯 - BOURNS		晶体晶体管局域网
页数	文件大小	规格书
4页	81K
描述
NPN SILICON POWER DARLINGTONS

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TIP122 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.62	Is Samacsys：	N
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	5 A
集电极-发射极最大电压：	100 V	配置：	DARLINGTON
最小直流电流增益 (hFE)：	1000	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	功耗环境最大值：	75 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	4 MHz	Base Number Matches：	1

TIP122 数据手册

TIP120, TIP121, TIP122

NPN SILICON POWER DARLINGTONS

●

Designed for Complementary Use with

TIP125, TIP126 and TIP127

TO-220 PACKAGE

(TOP VIEW)

●

65 W at 25°C Case Temperature

5 A Continuous Collector Current

Minimum h of 1000 at 3 V, 3 A

This series is currently available, but

not recommended for new designs.

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIP120

TIP121

TIP122

TIP120

TIP121

TIP122

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

100

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

0.1

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

260

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 5 mA, R_BE= 100 Ω,

V_BE(off)= 0, R_S= 0.1 Ω, V_CC= 20 V.

DECEMBER 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4

下载PDF

与TIP122相关器件

型号	品牌	描述	获取价格	数据表
TIP122(TO-126)	UTC	Transistor	获取价格
TIP122(TO-220)	JCST	Transistor	获取价格
TIP122_08	UTC	NPN EPITAXIAL TRANSISTOR	获取价格
TIP122_08	FAIRCHILD	NPN Epitaxial Darlington Transistor	获取价格
TIP122_11	MCC	NPN Silicon Transistors	获取价格
TIP122_15	UTC	NPN EPITAXIAL TRANSISTOR	获取价格