Datasheet > SGL0363Z

SGL0363Z

更新时间： 2022-02-26 10:26:19

品牌	Logo	应用领域
威讯 - RFMD		放大器
页数	文件大小	规格书
11页	828K
描述
5MHz to 2000MHz LOW NOISE AMPLIFIER SILICON GERMANIUM

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SGL0363Z 数据手册

SGL0363Z

5MHz to

2000MHz Low

Noise Ampli-

fier Silicon

Germanium

SGL0363Z

5MHz to 2000MHz LOW NOISE AMPLIFIER

SILICON GERMANIUM

Package: SOT-363

Product Description

Features

RFMD’s SGL0363Z is a low power, low noise amplifier. It is designed for

2.7V to 3.3V battery operation. The matching networks are implemented

externally which allows for optimum narrow-band performance with 20dB

typical gain and 1.1dB noise figure from 200MHz to 900MHz. This RFIC

uses the latest Silicon Germanium HBT process.



Low Power Consumption,

5.7mA at 3.3V



External Input Noise Match

High Gain and Low Noise,

20dB and 1.1dB respectively

at 900MHz



Operates from 2.7V to 3.3V

Power Shutdown Capability

using VPC

Optimum Technology

Matching® Applied

Simplified Device Schematic

Vpc



500V ESD, Class 1B

GaAs HBT

RF Out

GaAs MESFET

Small Package: SOT-363

Narrow-band

Matching

Network

Gnd

InGaP HBT

High input overdrive capabil-

ity, +18dBm

Active Bias

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Network

Narrow-band

Matching

Network

Applications



RF In



Low Power LNA for ISM, Cellu-

lar and Mobile Communica-

tions

Si BJT

Gnd

GaN HEMT

RF MEMS

Specification

Parameter

Unit

Condition

Min.

Typ.

21.0

20.0

16.5

1.1

Max.

Small Signal Gain

200MHz

900MHz

1575MHz

200MHz

900MHz

1575MHz

200MHz

900MHz

1575MHz

200MHz

900MHz

1575MHz

200MHz

900MHz

1575MHz

200MHz

900MHz

1575MHz

200MHz

900MHz

junction - lead

18.0

15.0

22.0

18.5

Output Power at 1dB Compression

Output Third Order Intercept Point

Input Return Loss

dBm

°C/W

2.5

3.5

1.0

11.0

8.5

17.2

12.9

14.0

15.0

10.0

20.0

12.0

20.0

1.0

1.1

1.5

24.0

27.0

173

5.2

Output Return Loss

14.0

Noise Figure

2.0

7.0

Reverse Isolation

Thermal Resistance

Device Operating Current

3.5

Test Conditions: V =3.3V, I =5.2mA Typ., IIP Tone Spacing=1MHz, P

Band

per tone=-15dBm, T =25°C, Z =Z =50, Different Application Circuit per

L S L

OUT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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