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SBL830 PDF预览

SBL830

更新时间: 2024-02-16 15:33:24
品牌 Logo 应用领域
SIRECTIFIER 二极管
页数 文件大小 规格书
2页 82K
描述
肖特基势垒二极管Schottky Barrier Diodes,低压降肖特基势垒二极管Low VF Schottky Barrier Diodes,Tj = -40°C ~ 125°C, Tjm = 125°C。

SBL830 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AC
包装说明:PLASTIC PACKAGE-2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.56
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:30 V表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SBL830 数据手册

 浏览型号SBL830的Datasheet PDF文件第2页 
SBL830 thru SBL845  
Low VF Schottky Barrier Rectifiers  
Dimensions TO-220AC  
Dim.  
Inches  
Min. Max.  
Milimeter  
Min. Max.  
A
C
A
0.500 0.580  
0.560 0.650  
0.380 0.420  
0.139 0.161  
2.300 0.420  
0.100 0.135  
0.045 0.070  
12.70 14.73  
14.23 16.51  
9.66 10.66  
B
C
D
E
F
G
H
J
K
L
M
N
Q
A
C
C(TAB)  
3.54  
5.85  
2.54  
1.15  
-
4.08  
6.85  
3.42  
1.77  
6.35  
0.89  
5.33  
4.82  
0.56  
2.49  
1.39  
A=Anode, C=Cathode, TAB=Cathode  
VRRM  
V
VRMS  
V
VDC  
V
-
0.250  
0.025 0.035  
0.190 0.210  
0.140 0.190  
0.015 0.022  
0.080 0.115  
0.025 0.055  
0.64  
4.83  
3.56  
0.38  
2.04  
0.64  
SBL830  
SBL835  
SBL840  
SBL845  
30  
21  
30  
35  
40  
45  
35  
24.5  
28  
40  
45  
31.5  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
Maximum Average Forward Rectified Current @TC=95oC  
8
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
IFSM  
VF  
200  
Maximum Forward Voltage At 8.0A DC (Note 1)  
0.55  
V
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
0.5  
50  
IR  
mA  
@TJ=100oC  
CJ  
ROJC  
TJ  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating Temperature Range  
Storage Temperature Range  
450  
pF  
oC/W  
oC  
3.0  
-55 to +125  
-55 to +150  
TSTG  
oC  
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.  
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
3. Thermal Resistance Junction To Case.  
FEATURES  
MECHANICAL DATA  
* Metal of silicon rectifier, majority carrier conducton  
* Guard ring for transient protection  
* Low power loss, high efficiency  
* High current capability, low VF  
* Case: TO-220AC molded plastic  
* Polarity: As marked on the body  
* Weight: 0.08 ounces, 2.24 grams  
* Mounting position: Any  
* High surge capacity  
* For use in low voltage, high frequency inverters, free  
whelling, and polarity protection applications  

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