Datasheet > SBL1050

SBL1050

更新时间： 2024-01-10 18:34:17

品牌	Logo	应用领域
SIRECTIFIER		二极管局域网
页数	文件大小	规格书
2页	82K
描述
肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。

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SBL1050 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

SBL1050 数据手册

SBL1050 thru SBL1060

Low VF Schottky Barrier Rectifiers

Dimensions TO-220AC

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.580

0.560 0.650

0.380 0.420

0.139 0.161

2.300 0.420

0.100 0.135

0.045 0.070

12.70 14.73

14.23 16.51

9.66 10.66

C(TAB)

3.54

5.85

2.54

1.15

4.08

6.85

3.42

1.77

6.35

0.89

5.33

4.82

0.56

2.49

1.39

A=Anode, C=Cathode, TAB=Cathode

0.250

0.025 0.035

0.190 0.210

0.140 0.190

0.015 0.022

0.080 0.115

0.025 0.055

0.64

4.83

3.56

0.38

2.04

0.64

VRRM

VRMS

VDC

SBL1050

SBL1060

Symbol

Characteristics

Maximum Ratings

Unit

I(AV)

IFSM

Maximum Average Forward Rectified Current @TC=95^oC

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

250

Maximum Forward Voltage At 10.0A DC (Note 1)

0.75

Maximum DC Reverse Current

At Rated DC Blocking Voltage

@TJ=25^oC

@TJ=100^oC

ROJC

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating Temperature Range

Storage Temperature Range

550

^oC/W

^oC

2.5

-55 to +125

-55 to +150

TSTG

^oC

NOTES: 1. 300us Pulse Width, 2% Duty Cycle.

2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

3. Thermal Resistance Junction To Case.

FEATURES

MECHANICAL DATA

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low VF

* Case: TO-220AC molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

* High surge capacity

* For use in low voltage, high frequency inverters, free

whelling, and polarity protection applications

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