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PC28F128P30B85

更新时间： 2024-02-10 09:27:59
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路
页数 文件大小 规格书
102页 1616K
描述
Intel StrataFlash Embedded Memory

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PC28F128P30B85 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：BGA, BGA64,8X8,40Reach Compliance Code：compliant
风险等级：5.82最长访问时间：85 ns
启动块：BOTTOM命令用户界面：YES
通用闪存接口：YES数据轮询：NO
JESD-30 代码：S-PBGA-B64内存密度：134217728 bit
内存集成电路类型：FLASH内存宽度：16
部门数/规模：4,127端子数量：64
字数：8388608 words字数代码：8000000
最高工作温度：85 °C最低工作温度：-40 °C
组织：8MX16封装主体材料：PLASTIC/EPOXY
封装代码：BGA封装等效代码：BGA64,8X8,40
封装形状：SQUARE封装形式：GRID ARRAY
页面大小：4 words并行/串行：PARALLEL
电源：1.8,1.8/3.3 V认证状态：Not Qualified
部门规模：16K,64K最大待机电流：0.000075 A
子类别：Flash Memories最大压摆率：0.051 mA
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
切换位：NO类型：NOR TYPE
Base Number Matches：1

PC28F128P30B85 数据手册

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®
Intel StrataFlash Embedded Memory  
(P30)  
1-Gbit P30 Family  
Datasheet  
Product Features  
■ High performance  
■ Security  
— One-Time Programmable Registers:  
— 85/88 ns initial access  
• 64 unique factory device identifier bits  
• 64 user-programmable OTP bits  
• Additional 2048 user-programmable OTP bits  
— Selectable OTP Space in Main Array:  
• 4x32KB parameter blocks + 3x128KB main  
blocks (top or bottom configuration)  
— Absolute write protection: VPP = VSS  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
— 40 MHz with zero wait states, 20 ns clock-to-  
data output synchronous-burst read mode  
— 25 ns asynchronous-page read mode  
— 4-, 8-, 16-, and continuous-word burst mode  
— Buffered Enhanced Factory Programming  
(BEFP) at 5 µs/byte (Typ)  
— 1.8 V buffered programming at 7 µs/byte (Typ)  
■ Architecture  
— Multi-Level Cell Technology: Highest Density  
at Lowest Cost  
■ Software  
— Asymmetrically-blocked architecture  
— Four 32-KByte parameter blocks: top or  
bottom configuration  
— 20 µs (Typ) program suspend  
— 20 µs (Typ) erase suspend  
— Intel® Flash Data Integrator optimized  
— Basic Command Set and Extended Command  
Set compatible  
— 128-KByte main blocks  
■ Voltage and Power  
— VCC (core) voltage: 1.7 V – 2.0 V  
— VCCQ (I/O) voltage: 1.7 V – 3.6 V  
— Standby current: 55 µA (Typ) for 256-Mbit  
— 4-Word synchronous read current:  
13 mA (Typ) at 40 MHz  
— Common Flash Interface capable  
■ Density and Packaging  
— 64/128/256-Mbit densities in 56-Lead TSOP  
package  
— 64/128/256/512-Mbit densities in 64-Ball  
Intel® Easy BGA package  
— 64/128/256/512-Mbit and 1-Gbit densities in  
Intel® QUAD+ SCSP  
■ Quality and Reliability  
— Operating temperature: –40 °C to +85 °C  
• 1-Gbit in SCSP is –30 °C to +85 °C  
— Minimum 100,000 erase cycles per block  
— ETOX™ VIII process technology (130 nm)  
— 16-bit wide data bus  
The Intel StrataFlash® Embedded Memory (P30) product is the latest generation of Intel  
StrataFlash® memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device  
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.  
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR  
device, and support for code and data storage. Features include high-performance synchronous-  
burst read mode, fast asynchronous access times, low power, flexible security options, and three  
industry standard package choices.  
The P30 product family is manufactured using Intel® 130 nm ETOX™ VIII process technology.  
Order Number: 306666, Revision: 001  
April 2005  
1234567...102

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与PC28F128P30B85相关器件

型号 品牌 描述 获取价格 数据表
PC28F128P30B85A NUMONYX 暂无描述

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PC28F128P30B85B NUMONYX Flash, 8MX16, 88ns, PBGA64, LEAD FREE, BGA-64

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PC28F128P30B85D NUMONYX Flash, 8MX16, 88ns, PBGA64, LEAD FREE, BGA-64

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PC28F128P30B85E NUMONYX 暂无描述

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PC28F128P30BF65A MICRON 64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash

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PC28F128P30BF65E MICRON 64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash

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