Datasheet > NLB-310

NLB-310

更新时间： 2024-01-30 11:19:42

品牌	Logo	应用领域
威讯 - RFMD		放大器
页数	文件大小	规格书
8页	207K
描述
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NLB-310 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.17
安装特点：	SURFACE MOUNT	功能数量：	1
端子数量：	4	最高工作温度：	85 °C
最低工作温度：	-45 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SL,4GW-LD,.085CIR	电源：	4.6 V
子类别：	RF/Microwave Amplifiers	表面贴装：	YES
技术：	BIPOLAR	Base Number Matches：	1

NLB-310 数据手册

NLB-310

CASCADABLE BROADBAND

GaAs MMIC AMPLIFIER DC TO 10GHz

Typical Applications

• Narrow and Broadband Commercial and

Military Radio Designs

• Gain Stage or Driver Amplifiers for

MWRadio/Optical Designs (PTP/PMP/

LMDS/UNII/VSAT/WLAN/Cellular/DWDM)

• Linear and Saturated Amplifiers

Product Description

The NLB-310 cascadable broadband InGaP/GaAs MMIC

amplifier is a low-cost, high-performance solution for gen-

eral purpose RF and microwave amplification needs. This

50Ω gain block is based on a reliable HBT proprietary

MMIC design, providing unsurpassed performance for

small-signal applications. Designed with an external bias

resistor, the NLB-310 provides flexibility and stability. The

NLB-310 is packaged in a low-cost, surface-mount plastic

package, providing ease of assembly for high-volume

tape-and-reel requirements.

MILLIMETERS

Min. Nom. Max. Min. Nom. Max.

0.535 REF. 0.021 REF.

INCHES

2.39 2.54 2.69 0.094 0.100 0.106

0.436 0.510 0.586 0.017 0.020 0.023

2.19 2.34 2.49 0.086 0.092 0.098

1.91 2.16 2.41 0.075 0.085 0.095

1.32 1.52 1.72 0.052 0.060 0.068

0.10 0.15 0.20 0.004 0.006 0.008

0.535 0.660 0.785 0.021 0.026 0.031

0.05 0.10 0.15 0.002 0.004 0.006

0.65 0.75 0.85 0.025 0.029 0.033

0.85 0.95 1.05 0.033 0.037 0.041

4 M

N 5

4 M 4.53 4.68 4.83 0.178 0.184 0.190

5 N 4.73 4.88 5.03 0.186 0.192 0.198

NOTE: All dimensions are in millimeters, and

the dimensions in inches are for reference only.

0.08 S

Gauge Plane

Seating Plane

1 J

0.1

L 3

Kx3

Optimum Technology Matching® Applied

Package Style: Micro-X, 4-Pin, Plastic

Si BJT

GaAs HBT

SiGe HBT

GaN HEMT

GaAs MESFET

Si Bi-CMOS

InGaP/HBT

Si CMOS

Features

SiGe Bi-CMOS

• Reliable, Low-Cost HBT Design

• 12.7dB Gain, +12.6dBm P1dB@2GHz

• High P1dB of +14.9dBm@6.0GHz and

+13.1dBm@10.0GHz

GND

MARKING - N6

• Single Power Supply Operation

• 50Ω I/O Matched for High Freq. Use

RF IN

3 RF OUT

Ordering Information

NLB-310

Cascadable Broadband GaAs MMIC Amplifier DC to

10GHz

GND

NLB-310-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)

NLB-310-E

NBB-X-K1

Fully Assembled Evaluation Board

Extended Frequency InGaP Amp Designer’s Tool Kit

RF Micro Devices, Inc.

7628 Thorndike Road

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Greensboro, NC 27409, USA

Functional Block Diagram

Rev A6 040409

4-139

12 3 4 5 6 7 8

下载PDF

与NLB-310相关器件

型号	品牌	描述	获取价格	数据表
NLB-310-	RFMD	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz	获取价格
NLB-310_06	RFMD	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz	获取价格
NLB-310_1	RFMD	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz	获取价格
NLB-310-E	RFMD	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz	获取价格
NLB-310-T1	RFMD	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz	获取价格
NLB-310-T3T	RFMD	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz	获取价格