5秒后页面跳转
NE85639-T1 PDF预览

NE85639-T1

更新时间: 2024-01-21 22:09:49
品牌 Logo 应用领域
CEL /
页数 文件大小 规格书
26页 828K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

NE85639-T1 数据手册

 浏览型号NE85639-T1的Datasheet PDF文件第2页浏览型号NE85639-T1的Datasheet PDF文件第3页浏览型号NE85639-T1的Datasheet PDF文件第4页浏览型号NE85639-T1的Datasheet PDF文件第5页浏览型号NE85639-T1的Datasheet PDF文件第6页浏览型号NE85639-T1的Datasheet PDF文件第7页 
NPN SILICON RF TRANSISTOR  
NE856 SERIES  
NEC's NPN SILICON HIGH  
FREQUENCY TRANSISTOR  
FEATURES  
HIGH GAIN BANDWIDTH PRODUCT:  
fT = 7 GHz  
E
LOW NOISE FIGURE:  
1.1 dB at 1 GHz  
B
HIGH COLLECTOR CURRENT: 100 mA  
HIGH RELIABILITY METALLIZATION  
LOW COST  
35 (MICRO-X)  
00 (CHIP)  
DESCRIPTION  
NEC's NE856 series of NPN epitaxial silicon transistors is  
designedforlowcostamplifierandoscillatorapplications. Low  
noise figures, high gain, and high current capability equate to  
wide dynamic range and excellent linearity. The NE856 series  
offers excellent performance and reliability at low cost. This is  
achieved by NEC's titanium/platinum/gold metallization sys-  
tem and their direct nitride passivated base surface process.  
The NE856 series is available in chip form and a Micro-x  
package for high frequency applications. It is also available in  
several low cost plastic package styles.  
32 (TO-92)  
34 (SOT 89 STYLE)  
19 (3 PIN ULTRA SUPER  
MINI MOLD)  
18 (SOT 343 STYLE)  
NE85600  
NOISE FIGURE AND GAIN  
vs. FREQUENCY  
V
CC = 10 V, IC 7 mA  
20  
15  
10  
5
4.0  
3.5  
MSG  
GA  
MAG  
3.0  
2.5  
2.0  
30 (SOT 323 STYLE)  
33 (SOT 23 STYLE)  
NFMIN  
1.5  
1.0  
0.4 0.5  
1.0  
2
3
4
5
Frequency, f (GHz)  
39 (SOT 143 STYLE)  
39R (SOT 143R STYLE)  
The information in this document is subject to change without notice. Before using this document, please confirm  
that this is the latest version.  
Date Published: June 28, 2005  

与NE85639-T1相关器件

型号 品牌 描述 获取价格 数据表
NE85639-T1-A CEL NPN SILICON HIGH FREQUENCY TRANSISTOR

获取价格

NE85639-T1-A NEC L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC PACKAGE-4

获取价格

NE85639-T2 CEL RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic

获取价格

NE856M02 NEC NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

获取价格

NE856M02 CEL NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

获取价格

NE856M02-T1 NEC NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

获取价格