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MURB1610CT PDF预览

MURB1610CT

更新时间: 2024-02-07 01:42:41
品牌 Logo 应用领域
SIRECTIFIER 二极管快恢复二极管超快恢复二极管功效快速恢复二极管
页数 文件大小 规格书
2页 102K
描述
快速恢复二极管Fast Recovery Diodes,超快恢复二极管Ultra Fast Recovery Diodes,Tj = -40°C ~ 125°C, Tjm = 125°C。

MURB1610CT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.45
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大非重复峰值正向电流:125 A
元件数量:2相数:1
端子数量:2最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.035 µs表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

MURB1610CT 数据手册

 浏览型号MURB1610CT的Datasheet PDF文件第2页 
MURB1610CT thru MURB1620CT  
Ultra Fast Recovery Diodes  
Dimensions TO-263(D2PAK)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
C(TAB)  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
A
C
A
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
A
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
A
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.315  
.380  
.350  
A=Anode, C=Cathode, TAB=Cathode  
E
E1  
e
9.65  
6.22  
2.54 BSC  
10.29  
8.13  
.380  
.245  
.100 BSC  
.405  
.320  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.20  
.575  
.090  
.040  
.050  
0
.625  
L1  
L2  
L3  
L4  
.110  
.055  
.070  
.008  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Botton Side  
VRRM  
V
VRMS  
V
VDC  
V
R
0.46  
0.74  
.018  
.029  
MURB1610CT 100  
MURB1620CT 200  
70  
100  
200  
140  
Symbol  
Characteristics  
Maximum Average Forward Rectified Current @TC=120oC  
Maximum Ratings  
Unit  
I(AV)  
16  
A
Non Repetitive Peak Forward Surge Current  
Per Diode Sinusoidal (JEDEC METHOD)  
TP=10ms  
TP=8.3ms  
80  
90  
IFSM  
A
V
IF=8A @TJ=25oC  
IF=8A @TJ=125oC  
IF=16A @TJ=25oC  
IF=16A @TJ=125oC  
1.1  
1.0  
1.25  
1.20  
Maximum Forward Voltage  
Pulse Width=300us  
Duty Cycle  
VF  
IR  
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
5
100  
uA  
@TJ=100oC  
CJ  
Typical Junction Capacitance Per Element (Note 1)  
Maximum Reverse Recovery Time (Note 2)  
Typical Thermal Resistance  
80  
30  
pF  
ns  
oC/W  
oC  
TRR  
ROJC  
3.0  
TJ,TSTG Operating And Storage Temperature Range  
-55 to +150  
NOTES: 1. Measured at 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.  
FEATURES  
* Glass passivated chip  
MECHANICAL DATA  
* Case: TO-263 molded plastic  
* Superfast switching time for high efficiency  
* Low forward voltage drop and high current capability  
* Low reverse leakage current  
* High surge capacity  
* Polarity: As marked on the body  
* Weight: 0.08 ounces, 2.24 grams  
* Mounting position: Any  

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