512Mb : 32 Me g x 16, 16 Me g x 32 Mo b ile SDRAM
Fe a t u re s
Mo b ile SDRAM
MT48H32M16LF – 8 Me g x 16 x 4 b a n ks
MT48H16M32LF/LG – 4 Me g x 32 x 4 b a n ks
Fe a t u re s
Op t io n s
Ma rkin g
• Endur-IC™ technology
• VDD/ VDDQ
• Fully synchronous; all signals registered on positive
edge of system clock
• VDD = 1.7–1.95V; VDDQ = 1.7–1.95V
• Internal, pipelined operation; column address can
be changed every clock cycle
• Four internal banks for concurrent operation
• Programmable burst lengths: 1, 2, 4, 8, and
continuous
• Auto precharge, includes concurrent auto precharge
• Auto refresh and self refresh modes
• LVTTL-compatible inputs and outputs
• On-chip temperature sensor to control refresh rate
• Partial-array self refresh (PASR)
– 1.8V/ 1.8V
• Row size option
H
– Standard addressing option
– Reduced page-size option
• Configuration
– 32 Meg x 16 (8 Meg x 16 x 4 banks)
– 16 Meg x 32 (4 Meg x 32 x 4 banks)
• Plastic “green” packages
– 54-Ball VFBGA (10mm x 11.5mm)
– 90-Ball VFBGA (10mm x 13mm)
• Timing – cycle time
– 7.5ns at CL = 3
LF
3, 4
LG
32M16
16M32
1
5
CJ
3
CM
-75
-8
– 8ns at CL = 3
• Power
• Deep power-down (DPD)
• Selectable output drive (DS)
– Standard IDD2P/ IDD7
– Low IDD2P/ IDD7
• Operating temperature range
– Commercial (0°C to +70°C)
– Industrial (–40°C to +85°C)
• Design revision
None
L
Ta b le 1:
Co n fig u ra t io n Ad d re ssin g
None
IT
:A
JEDEC-
Re d u ce d
Pa g e -Size
Op t io n 2
DQ Bu s
Wid t h
St a n d a rd
Arch it e ct u re
Op t io n
Number of banks
Bank address balls
Row address balls
Column address balls
Row address balls
Column address balls
4
4
BA0, BA1
–
Notes: 1. For continuous page burst, contact factory
for availability.
BA0, BA1
A0–A12
A0–A9
x16
x32
2. For reduced page-size option, contact fac-
tory for availability.
3. LG is a reduced page-size option. Contact
factory for availability.
–
A0–A12
A0–A8
A0–A13
A0–A7
4. Only available for x32 configuration.
5. Only available for x16 configuration.
Ta b le 2:
Ke y Tim in g Pa ra m e t e rs
CL = CAS (READ) latency
Clo ck Ra t e (MHz)
Acce ss Tim e
Sp e e d
Gra d e
CL = 2
CL = 3
CL = 2
CL = 3
-75
-8
104
100
133
125
9ns
9ns
6ns
7ns
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. H 6/07 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
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