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MT48H16M32LF PDF预览

MT48H16M32LF

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
镁光 - MICRON 动态存储器
页数 文件大小 规格书
73页 2407K
描述
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM

MT48H16M32LF 数据手册

 浏览型号MT48H16M32LF的Datasheet PDF文件第2页浏览型号MT48H16M32LF的Datasheet PDF文件第3页浏览型号MT48H16M32LF的Datasheet PDF文件第4页浏览型号MT48H16M32LF的Datasheet PDF文件第5页浏览型号MT48H16M32LF的Datasheet PDF文件第6页浏览型号MT48H16M32LF的Datasheet PDF文件第7页 
512Mb : 32 Me g x 16, 16 Me g x 32 Mo b ile SDRAM  
Fe a t u re s  
Mo b ile SDRAM  
MT48H32M16LF – 8 Me g x 16 x 4 b a n ks  
MT48H16M32LF/LG – 4 Me g x 32 x 4 b a n ks  
Fe a t u re s  
Op t io n s  
Ma rkin g  
• Endur-IC™ technology  
• VDD/ VDDQ  
• Fully synchronous; all signals registered on positive  
edge of system clock  
• VDD = 1.7–1.95V; VDDQ = 1.7–1.95V  
• Internal, pipelined operation; column address can  
be changed every clock cycle  
• Four internal banks for concurrent operation  
• Programmable burst lengths: 1, 2, 4, 8, and  
continuous  
Auto precharge, includes concurrent auto precharge  
Auto refresh and self refresh modes  
LVTTL-compatible inputs and outputs  
• On-chip temperature sensor to control refresh rate  
• Partial-array self refresh (PASR)  
– 1.8V/ 1.8V  
• Row size option  
H
– Standard addressing option  
– Reduced page-size option  
• Configuration  
– 32 Meg x 16 (8 Meg x 16 x 4 banks)  
– 16 Meg x 32 (4 Meg x 32 x 4 banks)  
• Plastic green” packages  
– 54-Ball VFBGA (10mm x 11.5mm)  
– 90-Ball VFBGA (10mm x 13mm)  
• Timing – cycle time  
– 7.5ns at CL = 3  
LF  
3, 4  
LG  
32M16  
16M32  
1
5
CJ  
3
CM  
-75  
-8  
– 8ns at CL = 3  
• Power  
• Deep power-down (DPD)  
• Selectable output drive (DS)  
– Standard IDD2P/ IDD7  
– Low IDD2P/ IDD7  
• Operating temperature range  
– Commercial (0°C to +70°C)  
– Industrial (–40°C to +85°C)  
• Design revision  
None  
L
Ta b le 1:  
Co n fig u ra t io n Ad d re ssin g  
None  
IT  
:A  
JEDEC-  
Re d u ce d  
Pa g e -Size  
Op t io n 2  
DQ Bu s  
Wid t h  
St a n d a rd  
Arch it e ct u re  
Op t io n  
Number of banks  
Bank address balls  
Row address balls  
Column address balls  
Row address balls  
Column address balls  
4
4
BA0, BA1  
Notes: 1. For continuous page burst, contact factory  
for availability.  
BA0, BA1  
A0–A12  
A0–A9  
x16  
x32  
2. For reduced page-size option, contact fac-  
tory for availability.  
3. LG is a reduced page-size option. Contact  
factory for availability.  
A0–A12  
A0–A8  
A0–A13  
A0–A7  
4. Only available for x32 configuration.  
5. Only available for x16 configuration.  
Ta b le 2:  
Ke y Tim in g Pa ra m e t e rs  
CL = CAS (READ) latency  
Clo ck Ra t e (MHz)  
Acce ss Tim e  
Sp e e d  
Gra d e  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
-75  
-8  
104  
100  
133  
125  
9ns  
9ns  
6ns  
7ns  
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03  
MT48H32M16LF_1.fm - Rev. H 6/07 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2005 Micron Technology, Inc. All rights reserved.  
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