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MT47H128M8 PDF预览

MT47H128M8

更新时间: 2022-12-16 16:49:26
品牌 Logo 应用领域
镁光 - MICRON 动态存储器双倍数据速率
页数 文件大小 规格书
131页 9265K
描述
DDR2 SDRAM

MT47H128M8 数据手册

 浏览型号MT47H128M8的Datasheet PDF文件第2页浏览型号MT47H128M8的Datasheet PDF文件第3页浏览型号MT47H128M8的Datasheet PDF文件第4页浏览型号MT47H128M8的Datasheet PDF文件第5页浏览型号MT47H128M8的Datasheet PDF文件第6页浏览型号MT47H128M8的Datasheet PDF文件第7页 
1Gb: x4, x8, x16 DDR2 SDRAM  
Features  
DDR2 SDRAM  
MT47H256M4 – 32 Meg x 4 x 8 banks  
MT47H128M8 – 16 Meg x 8 x 8 banks  
MT47H64M16 – 8 Meg x 16 x 8 banks  
Options1  
Marking  
Features  
Configuration  
VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V  
JEDEC-standard 1.8V I/O (SSTL_18-compatible)  
Differential data strobe (DQS, DQS#) option  
4n-bit prefetch architecture  
256 Meg x 4 (32 Meg x 4 x 8 banks)  
128 Meg x 8 (16 Meg x 8 x 8 banks)  
64 Meg x 16 (8 Meg x 16 x 8 banks)  
256M4  
128M8  
64M16  
FBGA package (Pb-free) – x16  
84-ball FBGA (8mm x 12.5mm)  
Rev. G, H  
FBGA package (Pb-free) – x4, x8  
HR  
HQ  
Duplicate output strobe (RDQS) option for x8  
DLL to align DQ and DQS transitions with CK  
8 internal banks for concurrent operation  
Programmable CAS latency (CL)  
60-ball FBGA (8mm x 11.5mm)  
Rev. G  
Posted CAS additive latency (AL)  
FBGA package (Pb-free) – x4, x8  
WRITE latency = READ latency - 1 tCK  
Selectable burst lengths (BL): 4 or 8  
Adjustable data-output drive strength  
64ms, 8192-cycle refresh  
60-ball FBGA (8mm x 10mm) Rev. H  
FBGA package (lead solder) – x16  
CF  
84-ball FBGA (8mm x 12.5mm)  
Rev. G, H  
HW  
FBGA package (lead solder) – x4, x8  
On-die termination (ODT)  
60-ball FBGA (8mm x 11.5mm)  
Rev. G  
HV  
JN  
Industrial temperature (IT) option  
RoHS-compliant  
FBGA package (lead solder) – x4, x8  
60-ball FBGA (8mm x 10mm) Rev. H  
Supports JEDEC clock jitter specification  
Timing – cycle time  
1.875ns @ CL = 7 (DDR2-1066)  
2.5ns @ CL = 5 (DDR2-800)  
2.5ns @ CL = 6 (DDR2-800)  
3.0ns @ CL = 4 (DDR2-667)  
3.0ns @ CL = 5 (DDR2-667)  
3.75ns @ CL = 4 (DDR2-533)  
-187E  
-25E  
-25  
-3E  
-3  
-37E  
Self refresh  
Standard  
Low-power  
Operating temperature  
Commercial (0°C TC 85°C)  
Industrial (–40°C TC 95°C;  
–40°C TA 85°C)  
None  
L
None  
IT  
AT  
:G/:H  
Automotive (–40°C TC , TA 105ºC)  
Revision  
1. Not all options listed can be combined to  
define an offered product. Use the Part  
Catalog Search on www.micron.com for  
product offerings and availability.  
Note:  
PDF: 09005aef821ae8bf  
1GbDDR2.pdf – Rev. T 02/10 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2004 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

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