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MBRA140T3 PDF预览

MBRA140T3

更新时间: 2024-01-21 13:33:33
品牌 Logo 应用领域
台芯 - TAYCHIPST 二极管
页数 文件大小 规格书
2页 6379K
描述
CHIP SCHOTTKY BARRIER DIODES

MBRA140T3 技术参数

是否无铅:不含铅生命周期:Active
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:1 week
风险等级:0.66Samacsys Confidence:3
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/224972.1.2.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=224972PCB Footprint:https://componentsearchengine.com/footprint.php?partID=224972
3D View:https://componentsearchengine.com/viewer/3D.php?partID=224972Samacsys PartID:224972
Samacsys Image:https://componentsearchengine.com/Images/9/MBRA140T3G.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/MBRA140T3G.jpg
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:Diodes MouldedSamacsys Footprint Name:SMA CASE 403D-02 ISSUE G
Samacsys Released Date:2015-11-03 12:30:39Is Samacsys:N
其他特性:FREE WHEELING DIODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.71 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

MBRA140T3 数据手册

 浏览型号MBRA140T3的Datasheet PDF文件第2页 
MBRA120T3 THRU MBRA1100T3  
20V-100V 1.0A  
CHIP SCHOTTKY BARRIER DIODES  
FEATURES  
Plastic package has Underwriters Laboratory  
FlammabilityClassification 94V-O Utilizing Flame  
RetardantEpoxy Molding Compound.  
For surface mounted applications.  
Exceeds environmental standards of MIL-S-19500 /  
228  
Low leakage current.  
MECHANICAL DATA  
Case : Molded plastic, JEDECDO-214AC  
Terminals : Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity : Indicated by c athode band  
Mounting Position : Any  
Weight : 0.0015 ounce, 0.05 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)  
PARAMETER  
CONDITIONS  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
1.0  
UNIT  
A
Forward rectified current  
See Fig.1  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC methode)  
Forward surge current  
IFSM  
30  
A
o
VR = VRRM TA = 25 C  
0.5  
10  
mA  
mA  
Reverse current  
IR  
o
VR = VRRM TA = 125 C  
o
Thermal resistance  
Junction to ambient  
RqJA  
CJ  
88  
C / w  
pF  
Diode junction capacitance  
Storage temperature  
f=1MHz and applied 4vDC reverse voltage  
120  
o
TSTG  
-55  
+150  
C
Operating  
*1  
*2  
*3  
*4  
MARKING  
VRRM  
VRMS  
VR  
VF  
temperature  
SYMBOLS  
CODE  
o
( C)  
(V)  
(V)  
(V)  
(V)  
MBRA120T3  
MBRA130T3  
MBRA140T3  
MBRA150T3  
MBRA160T3  
MBRA180T3  
MBRA1100T3  
SS12  
SS13  
SS14  
SS15  
SS16  
SS18  
S110  
20  
30  
40  
50  
60  
80  
14  
21  
28  
35  
42  
56  
70  
20  
30  
40  
50  
60  
80  
100  
0.50  
-55 to +125  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
0.70  
-55 to +150  
*3 Continuous reverse voltage  
*4 Maximum forward voltage  
0.85  
100  
1 of 2  
E-mail: sales@taychipst.com  
Web Site: www.taychipst.com  

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