Datasheet > M29F400B

M29F400B

更新时间： 2022-12-13 11:53:37

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
34页	232K
描述
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

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M29F400B 数据手册

M29F400T

M29F400B

4 Mbit (512Kb x8 or 256Kb x16, Boot Block)

Single Supply Flash Memory

NOT FOR NEW DESIGN

M29F400T and M29F400B are replaced

respectively by the M29F400BT and

M29F400BB

5V±10% SUPPLY VOLTAGE for PROGRAM,

ERASE and READOPERATIONS

FAST ACCESS TIME: 55ns

FAST PROGRAMMING TIME

– 10µs by Byte / 16µs by Word typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

MEMORY BLOCKS

TSOP48 (N)

12 x 20 mm

SO44 (M)

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI-BLOCK PROTECTION/TEMPORARY

UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

Figure 1. Logic Diagram

– Read and Program another Block during

Erase Suspend

LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

A0-A17

DQ0-DQ14

– Manufacturer Code: 0020h

– Device Code, M29F400T: 00D5h

– Device Code, M29F400B: 00D6h

DQ15A–1

BYTE

M29F400T

M29F400B

DESCRIPTION

The M29F400 is a non-volatile memory that may

be erased electrically at the block or chip level and

programmed in-system on a Byte-by-Byte or Word-

by-Word basis using only a single 5V V_CCsupply.

For Program and Erase operations the necessary

high voltages are generated internally. The device

can also be programmed in standard program-

mers.

AI01726B

The array matrix organisation allows each block to

be erased and reprogrammed without affecting

other blocks. Blocks can be protected against pro-

November 1999

1/34

This is information on a productstil l in production but not recommendedfor new designs.

12 3 4 5 6 7...34

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