Datasheet > K9F2808Q0B

K9F2808Q0B

更新时间： 2022-11-25 12:29:14

品牌	Logo	应用领域
三星 - SAMSUNG		闪存
页数	文件大小	规格书
29页	305K
描述
16M x 8 Bit NAND Flash Memory

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数据手册

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K9F2808Q0B 数据手册

K9F2808U0B-YCB0,YIB0

K9F2808Q0B-DCB0,DIB0

K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0

FLASH MEMORY

Document Title

16M x 8 Bit NAND Flash Memory

Revision History

Revision No. History

Draft Date

Remark

0.0

0.1

0.2

Initial issue.

May 28’ th 2001

Advance

K9F2808U0B(3.3V device)’ s qualification is finished

Jun. 30th 2001

Jul. 30th 2001

K9F2808Q0B (1.8V device)

- Changed typical read operation current (Icc1) from 8mA to 5mA

- Changed typical program operation current (Icc2) from 8mA to 5mA

- Changed typical erase operation current (Icc3) from 8mA to 5mA

- Changed typical program time(tPROG) from 200us to 300us

- Changed ALE to RE Delay (ID read, tAR1) from 100ns to 20ns

- Changed CLE hold time(tCLH) from 10ns to 15ns

- Changed CE hold time(tCH) from 10ns to 15ns

K9F2808Q0B

: Preliminary

- Changed ALE hold time(tALH) from 10ns to 15ns

- Changed Data hold time(tDH) from 10ns to 15ns

- Changed CE Access time(tCEA) from 45ns to 60ns

- Changed Read cycle time(tRC) from 50ns to 70ns

- Changed Write Cycle time(tWC) from 50ns to 70ns

- Changed RE Access time(tREA) from 35ns to 40ns

- Changed RE High Hold time(tREH) from 15ns to 20ns

- Changed WE High Hold time(tWH) from 15ns to 20ns

0.3

1. Device Code is changed

- TBGA package information : ’ B’ --> ’ D’

Aug. 23th 2001

ex) K9F2808Q0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0

K9F2808U0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0

2. VIH ,VIL of K9F2808Q0B(1.8 device) is changed

(before revision)

I/O pins

VccQ-0.4

VCC-0.4

VccQ

VCC

Input High Voltage

VIH

VIL

Except I/O pins

Input Low Voltage,

All inputs

0.4

(after revision)

VccQ-0.4

VccQ

+0.3

I/O pins

Input High Voltage

VIH

VIL

VCC

+0.3

Except I/O pins

VCC-0.4

-0.3

Input Low Voltage,

All inputs

0.4

Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site.

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

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与K9F2808Q0B相关器件

型号	品牌	描述	获取价格	数据表
K9F2808Q0B-D	SAMSUNG	16M x 8 Bit NAND Flash Memory	获取价格
K9F2808Q0B-DCB0	SAMSUNG	16M x 8 Bit NAND Flash Memory	获取价格
K9F2808Q0B-DCB00	SAMSUNG	Flash, 16MX8, 45ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63	获取价格
K9F2808Q0B-DIB0	SAMSUNG	16M x 8 Bit NAND Flash Memory	获取价格
K9F2808Q0B-DIB00	SAMSUNG	Flash, 16MX8, 45ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63	获取价格
K9F2808Q0C	SAMSUNG	16M x 8 Bit , 8M x 16 Bit NAND Flash Memory	获取价格