Datasheet > K7N401801B

K7N401801B

更新时间： 2022-12-11 21:38:34

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
18页	387K
描述
128Kx36 & 256Kx18 Pipelined NtRAM

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K7N401801B 数据手册

K7N403601B

K7N401801B

128Kx36 & 256Kx18 Pipelined NtRAM^TM

Document Title

128Kx36 & 256Kx18-Bit Pipelined NtRAM^TM

Revision History

Rev.No.

History

Draft Date

Remark

0.0

0.1

1. Initial document.

May. 15. 2001

June. 12. 2001

Preliminary

1. Changed DC parameters

Icc ; from 350mA to 290mA at -16,

from 330mA to 270mA at -15,

from 300mA to 250mA at -13,

ISB1 ; from 100mA to 80mA

0.2

1.0

1. Add x32 org. and industrial temperature

Aug. 11. 2001

Nov. 15. 2001

Preliminary

Final

1. Final spec release

2. Changed Pin Capacitance

- Cin ; from 5pF to 4pF

- Cout ; from 7pF to 6pF

2.0

1. Remove x32 organization

2. Remove -16 speed bin

Nov. 17. 2003

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

Nov. 2003

Rev 2.0

12 3 4 5 6 7...18

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