Datasheet > K7B401825B-QC

K7B401825B-QC

更新时间： 2022-11-26 04:26:38

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
18页	471K
描述
128Kx36/x32 & 256Kx18 Synchronous SRAM

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K7B401825B-QC 数据手册

K7A403600B

K7A403200B

K7A401800B

128Kx36/x32 & 256Kx18 Synchronous SRAM

Document Title

128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM

Revision History

Remark

Rev. No

History

Draft Date

Preliminary

0.0

0.1

1. Initial draft

May. 15. 2001

June. 12. 2001

1. Changed DC parameters

Icc ; from 350mA to 290mA at -16,

from 330mA to 270mA at -15,

from 300mA to 250mA at -14,

ISB1 ; from 100mA to 80mA

Preliminary

Final

0.2

0.3

1.0

1. Delete Pass-Through

June.25. 2001

Aug. 11. 2001

Nov. 15. 2001

1. Add x32 org. and industrial temperature

1. Final spec release

2. Changed Pin Capacitance

- Cin ; from 5pF to 4pF

- Cout ; from 7pF to 6pF

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

Nov 2001

Rev 1.0

12 3 4 5 6 7...18

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