Datasheet > K7A803600B

K7A803600B

更新时间： 2022-11-26 04:24:20

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
18页	402K
描述
256Kx36 & 512Kx18 Synchronous SRAM

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K7A803600B 数据手册

K7A803600B

K7A801800B

256Kx36 & 512Kx18 Synchronous SRAM

Document Title

256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

0.1

0.2

0.3

1.0

Initial draft

May. 18 . 2001

Preliminary

1. Delete pass- through

June. 26. 2001 Preliminary

1. Add x32 org part and industrial temperature part

1. change scan order(1) form 4T to 6T at 119BGA(x18)

Aug. 11. 2001

Aug. 28. 2001

Nov. 16. 2001

Preliminary

Final

1. Final spec release

2. Change ISB2 form 50mA to 60mA

2.0

2.1

3.0

Change ordering information( remove 225MHz at SPB)

1. Delete 119BGA package

April. 01. 2002 Final

April. 04. 2003 Final

1. Remove x32 organization

Nov. 17. 2003

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

Nov. 2003

Rev 3.0

12 3 4 5 6 7...18

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与K7A803600B相关器件

型号	品牌	描述	获取价格	数据表
K7A803600B_06	SAMSUNG	256Kx36 & 512Kx18 Synchronous SRAM	获取价格
K7A803600B-HC16	SAMSUNG	Cache SRAM, 256KX36, 3.5ns, CMOS, PBGA119, BGA-119	获取价格
K7A803600B-HC160	SAMSUNG	Cache SRAM, 256KX36, 3.5ns, CMOS, PBGA119, BGA-119	获取价格
K7A803600B-HI14	SAMSUNG	Cache SRAM, 256KX36, 3.8ns, CMOS, PBGA119, BGA-119	获取价格
K7A803600B-PC16	SAMSUNG	Standard SRAM, 256KX36, 3.5ns, CMOS, PQFP100	获取价格
K7A803600B-PC160	SAMSUNG	Cache SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, ROHS COMPLIANT, TQFP-100	获取价格