CMOS SRAM
K6R1016C1C-C/C-L, K6R1016C1C-I/C-P
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev.No.
Rev. 0.0
Rev. 1.0
History
Draft Data
Remark
Initial release with preliminary.
Aug. 5. 1998
Sep. 7. 1998
Preliminary
Preliminary
Relax DC characteristics.
Item
Previous
90mA
88mA
Changed
95mA
93mA
ICC
12ns
15ns
20ns
85mA
90mA
Rev. 2.0
Rev. 2.1
Add 48-fine pitch BGA.
Changed device part name for FP-BGA.
Sep. 17. 1998
Nov. 5. 1998
Preliminary
Final
Item
Previous
Changed
F
Symbol
Z
ex) K6R1016C1C-Z -> K6R1016C1C-F
Rev. 2.2
Changed device ball name for FP-BGA.
Previous
Dec. 10. 1998
Final
Changed
I/O1 ~ I/O8
I/O9 ~ I/O16
I/O9 ~ I/O16
I/O1 ~ I/O8
Rev. 3.0
Rev. 3.1
Rev. 4.0
Added Data Retention Characteristics.
Add 10ns part.
Mar. 3. 1999
Mar. 3. 2000
Sep.24. 2001
Final
Final
Final
Delete 20ns speed bin
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision 4.0
September 2001
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