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IS62LV1024LL PDF预览

IS62LV1024LL

更新时间: 2022-12-12 14:42:01
品牌 Logo 应用领域
矽成 - ICSI /
页数 文件大小 规格书
10页 132K
描述
128K x 8 LOW POWER AND LOW Vcc

IS62LV1024LL 数据手册

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IS62LV1024L  
IS62LV1024LL  
128K x 8 LOW POWER and LOW Vcc  
CMOS STATIC RAM  
ꢀEATURES  
DESCRIPTION  
The ICSI IS62LV1024L and IS62LV1024LL are low power  
and low Vcc,131,072-word by 8-bit CMOS static RAMs. They  
are fabricated using ICSI's high-performance CMOS technol-  
ogy. This highly reliable process coupled with innovative circuit  
design techniques, yields higher performance and low power  
consumption devices.  
• Access times of 45, 55, and 70 ns  
• Low active power: 60 mW (typical)  
• Low standby power: 15 µW (typical) CMOS  
standby  
• Low data retention voltage: 2V (min.)  
• Available in Low Power (-L) and  
Ultra Low Power (-LL)  
When CE1 is HIGH or CE2 is LOW (deselected), the device  
assumes a standby mode at which the power dissipation can  
be reduced by using CMOS input levels.  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
Easy memory expansion is provided by using two Chip Enable  
inputs, CE1 and CE2. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
• TTL compatible inputs and outputs  
• Single 2.7V to 3.6V power supply  
The IS62LV1024L and IS62LV1024LL are available in 32-pin  
8*20mm TSOP-1, 8*13.4mm TSOP-1, 450mil SOP and 48-pin  
6*8mm Tꢀ-BGA.  
ꢀUNCTIONAL BLOCK DIAGRAM  
512 X 2048  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CE2  
CONTROL  
CIRCUIT  
OE  
WE  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
LPSR018-0D 07/06/2001  
1

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