IRFP250

更新时间： 2024-01-06 06:26:25

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	258K
描述
N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET

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技术参数
数据手册

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IRFP250 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.91	配置：	Single
最大漏极电流 (Abs) (ID)：	33 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	180 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)

IRFP250 数据手册

IRFP250

N-CHANNEL 200V - 0.073Ω - 33A TO-247

PowerMesh™II MOSFET

TYPE

IRFP250

DSS

DS(on)

200V

< 0.085Ω

33 A

■

TYPICAL R (on) = 0.073Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

DESCRIPTION

TO-247

The PowerMESH™II is the evolution of the first

generation of MESH OVERLAY™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

UNINTERRUPTIBLE POWER SUPPLIES (UPS)

DC-AC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

200

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

200

DGR

Gate- source Voltage

±20

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

(●)

Drain Current (pulsed)

132

TOT

Total Dissipation at T = 25°C

180

Derating Factor

1.44

W/°C

V/ns

°C

dv/dt(1)

Peak Diode Recovery voltage slope

Storage Temperature

stg

–65 to 150

150

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)I ≤33A, di/dt ≤300A/µs, V ≤ V

, T ≤ T

j JMAX.

(BR)DSS

Sep 2000

1/8

12 3 4 5 6 7 8

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