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FP1189

更新时间： 2024-02-01 07:35:03
品牌 Logo 应用领域
WJCI 晶体晶体管放大器
页数 文件大小 规格书
12页 516K
描述
1/2 - Watt HFET

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FP1189 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：GREEN PACKAGE-3Reach Compliance Code：unknown
风险等级：5.7Is Samacsys：N
其他特性：HIGH RELIABILITY配置：SINGLE
FET 技术：HETERO-JUNCTION最高频带：S BAND
JEDEC-95代码：TO-243AAJESD-30 代码：R-PSSO-F3
JESD-609代码：e4湿度敏感等级：3
元件数量：1端子数量：3
工作模式：DEPLETION MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：NICKEL PALLADIUM GOLD端子形式：FLAT
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

FP1189 数据手册

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FP1189  
½ - Watt HFET  
Product Information  
Product Features  
· 50 – 4000 MHz  
Product Description  
Functional Diagram  
GND  
The FP1189 is  
a
high performance ½-Watt HFET  
(Heterostructure FET) in a low-cost SOT-89 surface-  
mount package. This device works optimally at a drain  
bias of +8 V and 125 mA to achieve +40 dBm output IP3  
performance and an output power of +27 dBm at 1-dB  
compression, while providing 20.5 dB gain at 900 MHz.  
4
· +27 dBm P1dB  
· +40 dBm Output IP3  
· High Drain Efficiency  
· 20.5 dB Gain @ 900 MHz  
1
2
3
The device conforms to WJ Communications’ long history  
of producing high reliability and quality components. The  
FP1189 has an associated MTTF of greater than 100 years  
at a mounting temperature of 85°C and is available in both  
the standard SOT-89 package and the environmentally-  
friendly lead-free/green/RoHS-compliant and green SOT-  
89 package. All devices are 100% RF & DC tested.  
· Lead-free/Green/RoHS-  
compliant SOT-89 Package  
RF IN  
GND  
RF OUT  
· MTTF >100 Years  
Function  
Input / Gate  
Output / Drain  
Ground  
Pin No.  
1
3
2, 4  
Applications  
· Mobile Infrastructure  
The product is targeted for use as driver amplifiers for  
wireless infrastructure where high performance and high  
efficiency are required.  
· CATV / DBS  
· W-LAN / ISM  
· RFID  
· Defense / Homeland Security  
· Fixed Wireless  
Specifications  
Typical Performance(5)  
DC Parameter  
Saturated Drain Current, Idss  
Transconductance, Gm  
Pinch Off Voltage, V  
Units Min Typ Max Parameter  
Units  
MHz  
dB  
dB  
dB  
Typical  
1960 2140 2450  
(1)  
mA  
mS  
V
220  
290  
155  
-2.1  
360  
Frequency  
Gain  
915  
20.6  
13  
15.7  
26  
14.7 13.2  
24  
(2)  
Input Return Loss  
Output Return Loss  
Output P1dB  
Output IP3 (4)  
Noise Figure  
36  
7.6  
p
6.0  
9.6  
9.0  
RF Parameter (3)  
Operational Bandwidth  
Units Min Typ Max  
MHz  
dBm +27.4 +27.2 +27.2 +28.1  
dBm +39.9 +40.4 +39.7 +40.0  
dB  
50 - 4000  
2.7  
3.7  
4.3  
Test Frequency  
Small Signal Gain  
SS Gain (50 W, unmatched)  
Maximum Stable Gain  
Output P1dB  
Output IP3 (4)  
Noise Figure  
MHz  
dB  
800  
20.5  
IS-95 Channel Power  
dBm  
+21 +20.8  
@ -45 dBc ACPR  
dB  
dB  
dBm  
dBm  
dB  
17  
21  
W-CDMA Ch. Power  
+18.4  
@ -45 dBc ACLR  
24  
+27.4  
+40  
2.7  
+8  
125  
Drain Voltage  
Drain Current  
V
mA  
5. Typical parameters represent performance in a tuned application circuit.  
Drain Bias  
+8 V @ 125 mA  
1. Idss is measured with Vgs = 0 V, Vds = 3 V.  
2. Pinch-off voltage is measured when Ids = 1.2mA.  
3. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 125 mA, in a tuned application  
circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power).  
4. 3OIP measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. The  
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
Ordering Information  
Absolute Maximum Rating  
Part No.  
FP1189  
Description  
Parameter  
Rating  
-40 to +85 °C  
-55 to +150 °C  
2.0 W  
½ -Watt HFET  
Operating Case Temperature  
Storage Temperature  
DC Power  
(leaded SOT-89 Pkg)  
½ -Watt HFET  
(lead-free/green/RoHS-compliant SOT-89 Pkg)  
FP1189-G  
RF Input Power (continuous)  
6 dB above Input P1dB  
+14 V  
+220° C  
FP1189-PCB900S  
FP1189-PCB1900S  
FP1189-PCB2140S  
870 – 960 MHz Application Circuit  
1930 – 1990 MHz Application Circuit  
2110 – 2170 MHz Application Circuit  
Drain to Gate Voltage, V  
dg  
Junction Temperature  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice.  
September 2004  
WJ Communications, Inc · Phone 1-800- WJ1-4401 · FAX: 408-577-6621 · e- mail: sales@wj.com · Web site: www.wj.com  
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