EDI8L32512C
White Electronic Designs
512Kx32 CMOS High Speed Static RAM
FEATURES
DESCRIPTION
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DSP Memory Solution
The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The
device is available with access times of 12, 15, 17 and
20ns allowing the creation of a no wait state DSP memory
solution. The high speed, 5v supply voltage and control lines
make the divice ideal for creating floating point DSP memory
solutions.
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Motorola DSP96002
Analog SHARC DSP
Texas Instruments TMS320C3x, TMS320C4x
Random Access Memory Array
The device can be configured as a 512K x 32 and used to
create a single chip external data memory solution for TI's
TMS320C30/C31 (Figure 8), TMS320C32 (Figure 9) or
TMS320C4x (Figure 10), Motorola's DSP96002 andAnalog's
SHARC DSP (Figure 11). Alternatively, the device's chip
enables can be used to configure it as a 1M x 16. A 1M x 48
program memory array for Analog's SHARC DSP is created
using three devices (Figure 12). If this memory is too deep,
two 512K x 24s (EDI8L24512C) can be used to create a 512K
x 48 array or two 128K x 48 array.
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Fast Access Times: 12*, 15, 17, and 20ns
TTL Compatible I/O
Fully Static, No Clocks
Surface Mount Package
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68 Lead PLCC, No. 99 JEDEC M0-47AE
Small Footprint, 0.990 Sq. In.
Multiple Ground Pins for Maximum Noise Immunity
Single +5V ( 5ꢀ% Supply Operation
The device provides a 56% space savings when compared
to four 512K x 8, 36 pin SOJs. In addition the EDI8L32512C
has only a 10pF load on the data lines vs. 32pF for four
plastic SOJs.
* Advanced Information
The device provides a memory upgrade of the EDI8L32256C
(256K x 32) or the EDI8L32128C (128K x 32). For additional
upgrade information see Figure 13.
Note: Solder Reflow Temperature should not exceed 230°C for 10 seconds.
FIG. 1 PIN CONFIGURATIONS AND BLOCK DIAGRAM
BYTE CONTROL
TABLE
PIN NAMES
A0-A18
E0#-E3#
W#
G#
Address Inputs
Chip Enables
Write Enables
Output Enable
Common Data Input/Output
Power (+5V 10ꢀ%
Ground
Chip
Byte
Enable
Control
60 DQ14
E0#
E1#
E2#
E3#
DQ0-7
DQ8-15
DQ16-23
DQ24-31
DQ17 10
59 DQ13
DQ18 11
58 DQ12
57 VSS
DQ19 12
VSS 13
DQ20 14
DQ21 15
DQ22 16
DQ23 17
VCC 18
DQ24 19
DQ25 20
DQ26 21
DQ27 22
VSS 23
DQ28 24
DQ29 25
DQ30 26
DQ0-DQ31
56 DQ11
55 DQ10
54 DQ9
53 DQ8
52 VCC
51 DQ7
50 DQ6
49 DQ5
48 DQ4
47 VSS
VCC
VSS
NC
No Connection
A0-18
G#
19
46 DQ3
45 DQ2
44 DQ1
W#
DQ0-DQ7
512K x 32
Memory
Array
E0#
E1#
E2#
E3#
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
Note: For memory upgrade information, refer to Pg 8, Fig 13 "EDI MCM-L Upgrade Path"
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
August 2000
Rev. 7
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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