Datasheet > EDI88512CA20MM

EDI88512CA20MM

更新时间： 2024-02-04 20:05:22

品牌	Logo	应用领域
WEDC		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
7页	287K
描述
Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, PLASTIC, SOJ-36

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技术参数
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EDI88512CA20MM 技术参数

生命周期：	Obsolete	包装说明：	PLASTIC, SOJ-36
Reach Compliance Code：	unknown	风险等级：	5.57
最长访问时间：	20 ns	JESD-30 代码：	R-PDSO-J36
内存密度：	4194304 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	8	功能数量：	1
端子数量：	36	字数：	524288 words
字数代码：	512000	工作模式：	ASYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-55 °C
组织：	512KX8	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
并行/串行：	PARALLEL	认证状态：	Not Qualified
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子形式：	J BEND	端子位置：	DUAL
Base Number Matches：	1

EDI88512CA20MM 数据手册

EDI88512CA-RP

White Electronic Designs

512Kx8 Plastic Monolithic SRAM CMOS

WEDC's ruggedized plastic 512Kx8 SRAM that allows

the user to capitalize on the cost advantage of using a

plastic component while not sacriﬁcing all of the reliability

available in a full military device.

FEATURES

ꢀ

512Kx8 bit CMOS Static

ꢀ

Random Access Memory

Extended temperature testing is performed with the test

patterns developed for use on WEDC’s fully compliant

512Kx8 SRAMs. WEDC fully characterizes devices

to determine the proper test patterns for testing at

temperature extremes. This is critical because the

operating characteristics of device change when it is

operated beyond the commercial guarantee a device that

operates reliably in the ﬁeld at temperature extremes.

Users of WEDC’s ruggedized plastic beneﬁt from WEDC’s

extensive experience in characterizing SRAMs for use in

military systems.

• Access Times of 17, 20, 25ns

• Data Retention Function (LPA version)

• Extended Temperature Testing

• Data Retention Functionality Testing

36 lead JEDEC Approved Revolutionary Pinout

• Plastic SOJ (Package 319)

ꢀ

Single +5V (±10%) Supply Operation

WEDC ensures Low Power devices will retain data in Data

Retention mode by characterizing the devices to determine

the appropriate test conditions. This is crucial for systems

operating at -40°C or below and using dense memories

such as 512Kx8s.

WEDC’s ruggedized plastic SOJ is footprint compatible

with WEDC’s full military ceramic 36 pin SOJ.

FIG. 1 – PIN CONFIGURATION

PIN Description

TOP VIEW

I/O0-7

Data Inputs/Outputs

Address Inputs

Write Enables

Chip Selects

A^0-18

WE#

CS#

OE#

V^CC

36 NC

35 A18

34 A17

33 A16

32 A15

31 OE#

30 I/O7

29 I/O6

28 VSS

27 VCC

26 I/O5

25 I/O4

24 A14

23 A13

22 A12

21 A11

20 A10

19 NC

CS#

I/O0

I/O1

VCC

Output Enable

Power (+5V ±10%)

Ground

BLOCK DIAGRAM

36pin

V^SS

VSS 10

I/O2 11

I/O3 12

WE# 13

A5 14

Revolutionary

Not Connected

Memory Array

A6 15

A7 16

A8 17

Address

Buffer

Address

Decoder

I/O

Ø-18

I/OØ-7

Circuits

A9 18

WE#

CS#

OE#

May 2004

Rev. 6

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

12 3 4 5 6 7

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与EDI88512CA20MM相关器件

型号	品牌	描述	获取价格	数据表
EDI88512CA20MMG	WEDC	Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36	获取价格
EDI88512CA-20MMG	MICROSEMI	512KX8 STANDARD SRAM, 20ns, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36	获取价格
EDI88512CA20MMRP	WEDC	Standard SRAM, 512KX8, 20ns, CMOS, PDSO36,	获取价格
EDI88512CA20N36B	MERCURY	Standard SRAM, 512KX8, 20ns, CMOS, CDSO36, CERAMIC, SOJ-36	获取价格
EDI88512CA20N36C	ETC	x8 SRAM	获取价格
EDI88512CA20N36I	MERCURY	Standard SRAM, 512KX8, 20ns, CMOS, CDSO36, CERAMIC, SOJ-36	获取价格

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