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BZT55F5V6 PDF预览

BZT55F5V6

更新时间: 2024-02-09 16:36:48
品牌 Logo 应用领域
TEMIC 测试二极管
页数 文件大小 规格书
6页 96K
描述
Zener Diode, 5.6V V(Z), 3%, 0.5W, Silicon, Unidirectional, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2

BZT55F5V6 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.62
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:40 ΩJESD-609代码:e0
元件数量:1最高工作温度:175 °C
最大功率耗散:0.5 W标称参考电压:5.6 V
子类别:Voltage Reference Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)最大电压容差:3%
工作测试电流:5 mABase Number Matches:1

BZT55F5V6 数据手册

 浏览型号BZT55F5V6的Datasheet PDF文件第2页浏览型号BZT55F5V6的Datasheet PDF文件第3页浏览型号BZT55F5V6的Datasheet PDF文件第4页浏览型号BZT55F5V6的Datasheet PDF文件第5页浏览型号BZT55F5V6的Datasheet PDF文件第6页 
BZT55C...  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Available with tighter tolerances  
Applications  
96 12009  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
300K/W  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
Power dissipation  
Z–current  
R
P
thJA  
V
Z
I
P /V  
V
Z
Junction temperature  
Storage temperature range  
T
175  
j
T
stg  
–65...+175  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
on PC board 50mmx50mmx1.6mm  
Symbol  
Value  
500  
Unit  
K/W  
Junction ambient  
R
thJA  
Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol  
Min  
Typ  
Max  
1.5  
Unit  
V
V
F
F
TELEFUNKEN Semiconductors  
1 (6)  
Rev. A2, 24-Jun-96  

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