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BZT55C39 PDF预览

BZT55C39

更新时间: 2024-02-11 04:08:47
品牌 Logo 应用领域
TEMIC 二极管齐纳二极管
页数 文件大小 规格书
6页 82K
描述
Silicon Epitaxial Planar Z-Diodes

BZT55C39 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.72
二极管类型:ZENER DIODEBase Number Matches:1

BZT55C39 数据手册

 浏览型号BZT55C39的Datasheet PDF文件第2页浏览型号BZT55C39的Datasheet PDF文件第3页浏览型号BZT55C39的Datasheet PDF文件第4页浏览型号BZT55C39的Datasheet PDF文件第5页浏览型号BZT55C39的Datasheet PDF文件第6页 
BZT55C...  
TELEFUNKEN Semiconductors  
Silicon Epitaxial Planar Z–Diodes  
Features  
D Very sharp reverse characteristic  
D Low reverse current level  
D Very high stability  
D Low noise  
D Available with tighter tolerances  
Applications  
94 9373  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25_C  
j
Parameter  
Test Conditions  
x300K/W  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
°C  
Power dissipation  
R
P
thJA  
V
Z
Z–current  
I
P /V  
V
Z
Junction temperature  
Storage temperature range  
T
175  
j
T
stg  
–65...+175  
°C  
Maximum Thermal Resistance  
T = 25_C  
j
Parameter  
Test Conditions  
on PC board 50mmx50mmx1.6mm  
Symbol  
Value  
500  
Unit  
K/W  
Junction ambient  
R
thJA  
Characteristics  
T = 25_C  
j
Parameter  
Test Conditions  
I =200mA  
Type  
Symbol  
Min  
Typ  
Max  
1.5  
Unit  
V
Forward voltage  
V
F
F
Rev. A1: 12.12.1994  
1

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