Datasheet > BYW98-200

BYW98-200

更新时间： 2024-01-04 21:34:42

品牌	Logo	应用领域
台芯 - TAYCHIPST		整流二极管功效快速恢复二极管
页数	文件大小	规格书
2页	965K
描述
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

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技术参数
数据手册

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BYW98-200 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.76	Is Samacsys：	N
Base Number Matches：	1

BYW98-200 数据手册

BYW98-200

200V

3.0A

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

FEATURES

VERY LOW CONDUCTION LOSSES

NEGLIGIBLE SWITCHING LOSSES

LOW FORWARD AND REVERSE RECOVERY

TIMES

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Repetitive peak reverse voltage

Repetitive peak forward current *

Value

Unit

V_RRM

200

I_FRM

I_{F (AV)}

I_FSM

tp=5 µs

F=1KHz

110

Ta = 75°C

δ = 0.5

Average forward current*

t_p= 10ms

Sinusoidal

Surge non repetitive forward current

T_stg

- 65 to + 150

150

°C

Storage temperature range

Maximum operating junction temperature

T_L

230

Maximum lead temperature for soldering during 10s at

4mm from case

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Conditions

T_j= 25°C

Min. Typ. Max. Unit

I_R*

0.5

µA

Reverse leakage

current

V_R= V_RRM

T_j= 100°C

V_F**

1.2

Forward voltage drop T_j= 25°C

T_j= 100°C

I_F= 9A

I_F= 3A

0.78

0.85

RECOVERY CHARACTERISTICS

Symbol

Test Conditions

dI_F/dt = - 50A/µs

Min.

Typ. Max.

Unit

t_rr

T_j= 25°C

V_R= 30V

I_F= 1A

I_F= 3A

Q_rr

t_fr

T_j= 25°C

V_R≤ 30V

dI_F/dt = - 20A/µs

dI_F/dt = - 50A/µs

T_j= 25°C

Measured at 1.1 x V_Fmax

V_FP

T_j= 25°C I_F= 3A

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

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