Datasheet > BYD13K

BYD13K

更新时间： 2024-01-25 03:02:47

品牌	Logo	应用领域
台芯 - TAYCHIPST		二极管局域网
页数	文件大小	规格书
3页	3728K
描述
Controlled avalanche rectifiers

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技术参数
数据手册

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BYD13K 技术参数

生命周期：	Obsolete	包装说明：	O-LALF-W2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.83
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	O-LALF-W2	元件数量：	1
端子数量：	2	最高工作温度：	175 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	认证状态：	Not Qualified
表面贴装：	NO	技术：	AVALANCHE
端子形式：	WIRE	端子位置：	AXIAL

BYD13K 数据手册

BYD13D THRU BYD13M

200V-1000V

0.750A-1.4A

Controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

•

Available in ammo-pack.

MECHANICAL DATA

Cavity free cylindrical glass package

through Implotec ⁽¹⁾technology.

•

This package is hermetically sealed

and fatigue free as coefficients of

expansion of all used parts are

matched.

•

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

I_F(AV)

−

1.40

average forward current

T_tp= 55 °C; lead length = 10 mm;

averaged over any 20 ms period;

see Figs 2 and 4

−

0.75

T_amb= 65 °C; PCB mounting

(see Fig.9);

averaged over any 20 ms period;

see Figs 3 and 4

I_FSM

non-repetitive peak forward current

t = 10 ms half sinewave;

T_j= T_{j max}prior to surge;

V_R= V_RRMmax

−

E_RSM

non-repetitive peak reverse

avalanche energy

L = 120 mH; T_j= T_{j max}prior to

surge; inductive load switched off

T_stg

T_j

storage temperature

junction temperature

−65

+175

°C

see Fig.5

ELECTRICAL CHARACTERISTICS

T_j= 25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

I_F= 1 A; T_j= T_{j max;}see Fig.6

I_F= 1 A; see Fig.6

MIN.

TYP.

MAX.

UNIT

V_F

forward voltage

−

0.93

1.05

V_(BR)R

reverse avalanche

breakdown voltage

I_R= 0.1 mA

BYD13D

BYD13G

225

450

650

900

1100

−

BYD13J

BYD13K

BYD13M

I_R

reverse current

V_R= V_RRMmax; see Fig.7

µA

µs

V_R= V_RRMmax; T_j= 165 °C; see Fig.7

−

100

t_rr

reverse recovery time when switched from I_F= 0.5 A to I_R= 1 A;

measured at I_R= 0.25 A; see Fig.10

−

C_d

diode capacitance

V_R= 0 V; f = 1 MHz; see Fig.8

−

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

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