Datasheet > BTB08

BTB08

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
SIRECTIFIER		可控硅
页数	文件大小	规格书
5页	337K
描述
Discrete Triacs(Non-Isolated/Isolated)

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BTB08 数据手册

BTB/BTA08

Discrete Triacs(Non-Isolated/Isolated)

Dimensions TO-220AB

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.550

0.580 0.630

0.390 0.420

0.139 0.161

0.230 0.270

0.100 0.125

0.045 0.065

0.110 0.230

0.025 0.040

12.70 13.97

14.73 16.00

9.91 10.66

3.54

5.85

2.54

1.15

2.79

0.64

2.54

4.32

1.14

0.35

2.29

4.08

6.85

3.18

1.65

5.84

1.01

BSC

4.82

1.39

0.56

2.79

0.100

BSC

0.170 0.190

0.045 0.055

0.014 0.022

0.090 0.110

ABSOLUTE MAXIMUM RATINGS

Parameter

RMS on-state current (full sine wave)

Value

Unit

Symbol

T(RMS)

TO-220AB

Tc = 110°C

t = 16.7 ms

t = 20 ms

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25°C)

F = 60 Hz

F = 50 Hz

TSM

tp = 10 ms

A s

I t

I t Value for fusing

Critical rate of rise of on-state current

dI/dt

F = 120 Hz

tp = 20 µs

Tj = 125°C

A/µs

, tr < 100 ns

= 2 x I

Peak gate current

Tj = 125°C

Average gate p ower diss ipation

Tj = 125°C

G(AV)

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

stg

°C

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)

■

Symbol

Test Conditions

Quadrant

BTA/BTB

Unit

(1)

I - II - III

MAX.

V = 12 V

R = 30

Ω

1.3

0.2

V = V

R = 3.3 k

Tj = 125°C

(2)

DRM

MIN.

MAX.

I = 100 mA

I = 1.2 I

I - III

dV/dt (2)

67 %

DRM

V/µs

gate open Tj = 125°C

Tj = 125°C

MIN.

400

4.5

1000

(dI/dt)c (2) Without snubber

A/ms

12 3 4 5

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与BTB08相关器件

型号	品牌	描述	获取价格	数据表
BTB08-200A	ETC	TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-220	获取价格
BTB08-200AW	ETC	TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-220	获取价格
BTB08200B	ETC	TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-220	获取价格
BTB08-200B	STMICROELECTRONICS	TRIACS	获取价格
BTB08-200BW	ETC	TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-220	获取价格
BTB08-200C	ETC	TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-220	获取价格