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BS62LV8005 PDF预览

BS62LV8005

更新时间: 2022-12-14 03:57:20
品牌 Logo 应用领域
BSI 静态存储器
页数 文件大小 规格书
10页 219K
描述
Very Low Power/Voltage CMOS SRAM 1M X 8 bit

BS62LV8005 数据手册

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Very Low Power/Voltage CMOS SRAM  
1M X 8 bit  
BSI  
BS62LV8005  
„ GENERAL DESCRIPTION  
„ FEATURES  
• Wide Vcc operation voltage : 4.5V ~ 5.5V  
• Very low power consumption :  
The BS62LV8005 is a high performance, very low power CMOS  
Static Random Access Memory organized as 1,048,576 words by 8 bits  
and operates from a wide range of 4.5V to 5.5V supply voltage.  
Advanced CMOS technology and circuit techniques provide both high  
speed and low power features with a typical CMOS standby current of  
3uA and maximum access time of 55ns in 5V operation.  
Vcc = 5V C-grade: 45mA (Max.) operation current  
I -grade: 50mA (Max.) operating current  
3uA (Typ.) CMOS standby current  
• High speed access time :  
-55  
-70  
55ns (Max) at Vcc = 5V  
70ns (Max) at Vcc = 5V  
Easy memory expansion is provided by an active LOW chip  
enable (CE1), an active HIGH chip enable(CE2) and active LOW output  
enable (OE) and three-state output drivers.  
• Automatic power down when chip is deselected  
• Three state outputs and TTL compatible  
• Fully static operation  
The BS62LV8005 has an automatic power down feature, reducing the  
power consumption significantly when chip is deselected.  
• Data retention supply voltage as low as 1.5V  
• Easy expansion with CE1, CE2 and OE options  
The BS62LV8005 is available in 44 pin TSOP2 and 48-pin BGA type.  
„ PRODUCT FAMILY  
POWER DISSIPATION  
SPEED  
( ns )  
(SI TAN,DMBaYx )  
Operating  
PRODUCT  
FAMILY  
OPERATING  
Vcc  
( I , Max )  
CC  
CCSB1  
PKG TYPE  
TEMPERATURE  
RANGE  
Vcc=5V  
55 / 70  
55 / 70  
Vcc=5V  
30uA  
Vcc=5V  
45mA  
50mA  
BS62LV8005EC  
BS62LV8005BC  
BS62LV8005EI  
BS62LV8005BI  
TSOP2-44  
+0OC to +70OC 4.5V ~ 5.5V  
-40OC to +85OC 4.5V ~ 5.5V  
BGA-48-0810  
TSOP2-44  
50uA  
BGA-48-0810  
„ PIN CONFIGURATIONS  
„ FUNCTIONAL BLOCK DIAGRAM  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A4  
A5  
2
A3  
A6  
3
A2  
A7  
4
A1  
OE  
5
A0  
CE2  
A8  
A13  
A17  
A15  
6
CE1  
7
NC  
NC  
8
NC  
NC  
Address  
A18  
9
DQ0  
DQ7  
DQ6  
GND  
VCC  
DQ5  
DQ4  
NC  
Memory Array  
2048 X 4096  
22  
10  
2048  
BS62LV8005EC  
DQ1  
A16  
A14  
A12  
A7  
Row  
11  
VCC  
Input  
BS62LV8005EI  
12  
GND  
13  
DQ2  
Decoder  
Buffer  
14  
DQ3  
15  
A6  
NC  
16  
NC  
NC  
A9  
A5  
17  
WE  
A4  
18  
A19  
A10  
A11  
A12  
A13  
A14  
19  
A18  
4096  
20  
A17  
21  
A16  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
8
Data  
22  
8
Column I/O  
A15  
Input  
Buffer  
Write Driver  
Sense Amp  
1
2
3
4
5
6
8
8
Data  
A
B
C
D
E
F
OE  
A0  
A3  
A1  
A4  
A2  
CE2  
NC  
NC  
512  
Output  
Buffer  
Column Decoder  
18  
NC  
NC  
NC  
D1  
CE1  
NC  
CE1  
CE2  
WE  
OE  
A5  
A6  
D0  
VSS  
VCC  
D4  
Control  
Address Input Buffer  
A17  
VCC  
A14  
A12  
A9  
A7  
D5  
D6  
VCC  
VSS  
Vdd  
Gnd  
A11A9 A8 A3 A2 A1 A0A10 A19  
D2  
NC  
NC  
A16  
A15  
A13  
A10  
D7  
NC  
A19  
D3  
NC  
NC  
G
H
WE  
A11  
A18  
A8  
48-Ball CSP top View  
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.  
Revision 2.4  
April 2002  
R0201-BS62LV8005  
1

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