Very Low Power/Voltage CMOS SRAM
128K X 8 bit
BSI
BS62LV1029
DESCRIPTION
FEATURES
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
The BS62LV1029 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a range of 4.5V to 5.5V supply voltage.
Vcc = 5.0V C-grade : 46mA (@55ns) operating current
I- grade : 47mA (@55ns) operating current
C-grade : 38mA (@70ns) operating current
I- grade : 39mA (@70ns) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.6uA at 5V/25oC and maximum access time of 55ns at 5V/85oC.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
-55
-70
55ns
70ns
The BS62LV1029 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1029 is available in DICE form , JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4
mm STSOP and 8mmx20mm TSOP.
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options
PRODUCT FAMILY
POWER DISSIPATION
SPEED
(ns)
55ns :4.5~5.5V
70ns :4.5~5.5V
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
PKG TYPE
55nsVcc=5.0V70ns
Vcc=5.0V
BS62LV1029SC
BS62LV1029TC
BS62LV1029STC
BS62LV1029PC
BS62LV1029JC
BS62LV1029DC
BS62LV1029SI
BS62LV1029TI
BS62LV1029STI
BS62LV1029PI
BS62LV1029JI
BS62LV1029DI
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
+0 O C to +70 O
C
C
4.5V ~ 5.5V
4.5V~ 5.5V
55/70
55/70
8.0uA
38mA
39mA
46mA
47mA
-40 O C to +85 O
20uA
BLOCK DIAGRAM
PIN CONFIGURATIONS
NC
A16
A14
A12
A7
1
VCC
32
A6
A7
A12
A14
A16
A15
A13
A8
2
A15
CE2
WE
A13
A8
31
3
30
Address
4
29
Memory Array
1024 x 1024
20
1024
Row
5
28
27
Input
A6
6
A5
Decoder
7
A9
BS62LV1029SC 26
Buffer
A4
8
BS62LV1029SI
BS62LV1029PC
BS62LV1029PI
BS62LV1029JC
BS62LV1029JI
A11
OE
25
24
23
22
21
20
19
18
17
A3
A9
A11
9
A2
10
11
12
13
14
15
16
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
A1
1024
A0
DQ0
DQ1
DQ2
GND
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
8
Data
Input
Buffer
8
Column I/O
Write Driver
Sense Amp
8
8
Data
Output
Buffer
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
128
Column Decoder
14
1
2
3
4
5
6
7
8
A11
A9
A8
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
CE2
CE1
WE
BS62LV1029TC
Control
BS62LV1029STC
BS62LV1029TI
BS62LV1029STI
Address Input Buffer
9
OE
Vdd
Gnd
10
11
12
13
14
15
16
A5 A4 A3 A2 A1 A0 A10
A6
A5
A4
A1
A2
A3
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
Revision 1.1
Jan. 2004
R0201-BS62LV1029
1
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