Very Low Power/Voltage CMOS SRAM
BSI 256K X 16 bit
• Wide Vcc operation voltage : 2.4V ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 25mA (@55ns) operating current
I -grade: 27mA (@55ns) operating current
C-grade: 17mA (@70ns) operating current
I -grade: 18mA (@70ns) operating current
0.45uA (Typ.) CMOS standby current
• High speed access time :
55ns (Max.) at Vcc = 2.7~3.6V / 85oC
70ns (Max.) at Vcc = 2.4~3.6V / 85oC
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
BS616LV4016
• Easy expansion with CE and OE options
FEATURES
• I/O Configuration x8/x16 selectable by LB and UB pin
DESCRIPTION
The BS616LV4016 is a high performance, very low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits and
operates from a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.45uA at 3.0V/25oC and maximum access time of 55ns at 2.7V/85oC.
Easy memory expansion is provided by an active LOW chip enable (CE)
,active LOW output enable(OE) and three-state output drivers.
The BS616LV4016 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
-55
-70
The BS616LV4016 is available in DICE form , JEDEC standard 44-pin
TSOP Type II package and 48-ball BGA package.
• Data retention supply voltage as low as 1.5V
PRODUCT FAMILY
POWER DISSIPATION
SPEED
Operating
STANDBY
(
ns )
OPERATING
PRODUCT FAMILY
Vcc
RANGE
( ICCSB1 , Max )
( I CC , Max )
PKG TYPE
TEMPERATURE
55ns: 2.7~3.6V
70ns: 2.4~3.6V
Vcc =
Vcc = 3.0V
3.0V
55ns
70ns
BS616LV4016DC
BS616LV4016EC
DICE
+0O C to +70O
C
TSOP2-44
BGA-48-0608
DICE
2.4V ~ 3.6V
2.4V ~ 3.6V
55 / 70
55 / 70
25mA
27mA
17mA
6.0uA
8.0uA
BS616LV4016AC
BS616LV4016DI
-40O C to +85OC
TSOP2-44
BGA-48-0608
BS616LV4016EI
BS616LV4016AI
18mA
PIN CONFIGURATIONS
BLOCK DIAGRAM
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A5
A6
A7
OE
UB
LB
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A2
A1
A0
CE
A4
A3
A2
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A17
A16
A15
A14
A13
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
A12
A1
Address
22
2048
A0
A17
A16
BS616LV4016EC
BS616LV4016EI
Input
Row
Memory Array
2048 x 2048
Buffer
A15
A14
A13
A12
Decoder
2048
Data
Input
Buffer
16
16
16
Column I/O
DQ0
.
.
.
.
.
.
.
.
Write Driver
Sense Amp
128
Data
Output
16
Buffer
Column Decoder
DQ15
14
CE
WE
OE
UB
Control
Address Input Buffer
LB
A11 A10 A9 A8 A7
A6 A5
Vcc
Gnd
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
Revision 1.1
R0201-BS616LV4016
1
Jan.
2004
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