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AP603

更新时间: 2024-01-05 20:49:28
品牌 Logo 应用领域
WJCI 放大器
页数 文件大小 规格书
14页 1171K
描述
High Dynamic Range 7W 28V HBT Amplifier

AP603 技术参数

生命周期:Transferred包装说明:6 X 5 MM, ROHS COMPLIANT, MO-229VJGC, SMT, DFN-14
Reach Compliance Code:unknown风险等级:5.72
Is Samacsys:N其他特性:HIGH RELIABILITY
特性阻抗:50 Ω构造:COMPONENT
增益:11.8 dBJESD-609代码:e3
最大工作频率:2200 MHz最小工作频率:800 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:WIDE BAND MEDIUM POWER端子面层:MATTE TIN
最大电压驻波比:7Base Number Matches:1

AP603 数据手册

 浏览型号AP603的Datasheet PDF文件第2页浏览型号AP603的Datasheet PDF文件第3页浏览型号AP603的Datasheet PDF文件第4页浏览型号AP603的Datasheet PDF文件第5页浏览型号AP603的Datasheet PDF文件第6页浏览型号AP603的Datasheet PDF文件第7页 
AP603  
High Dynamic Range 7W 28V HBT Amplifier  
Product Features  
Product Description  
Functional Diagram  
The AP603 is a high dynamic range power amplifier in a  
lead-free/RoHS-compliant 5x6mm power DFN SMT  
package. The single stage amplifier has excellent backoff  
linearity, while being able to achieve high performance for  
800-2200 MHz applications with up to +38.5 dBm of  
compressed 1dB power.  
800 – 2200 MHz  
+38.5 dBm P1dB  
-50 dBc ACLR @ 1W PAVG  
-51 dBc IMD3 @ 1W PEP  
15% Efficiency @ 1W PAVG  
Internal Active Bias  
The AP603 uses  
a
high reliability, high voltage  
The device  
InGaP/GaAs HBT process technology.  
Internal Temp Compensation  
incorporates proprietary bias circuitry to compensate for  
variations in linearity and current draw over temperature.  
The module does not require any negative bias voltage; an  
internal active bias allows the AP603 to operate directly off  
a commonly used high voltage supply (typically +24 to  
+32V). An added feature allows the quiescent bias to be  
adjusted externally to meet specific system requirements.  
Capable of handling 7:1 VSWR @  
28 Vcc, 2.14 GHz, 5.5W CW Pout  
IMD3 vs. Output Power vs. Icq  
CW 2-tone signal, 2140 MHz, f = 1 MHz, Vcc = 28V, 25 ˚C  
-30  
Lead-free/RoHS-compliant  
5x6 mm power DFN package  
-40  
-50  
-60  
The AP603 is targeted for use as a pre-driver and driver  
stage amplifier in wireless infrastructure where high  
linearity and high efficiency is required. This combination  
makes the device an excellent candidate for next generation  
multi-carrier 3G mobile infrastructure.  
80 mA  
Applications  
-70  
160 mA  
260 mA  
-80  
Mobile Infrastructure  
High Power Amplifier (HPA)  
26  
28  
30  
32  
34 36  
Output Power, PEP (dBm)  
Specifications  
Typical Performance  
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB  
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA  
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB  
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA  
Parameter  
Units Min Typ Max  
Parameter  
Test Frequency  
Channel Power  
Power Gain  
Input Return Loss  
Output Return Loss  
ACLR  
IMD3 @ +30 dBm PEP  
Operating Current, Icc  
Collector Efficiency  
Output P1dB  
Quiescent Current, Icq  
Vpd, Vbias  
Units  
MHz  
dBm  
dB  
dB  
dB  
dBc  
dBc  
mA  
%
Typical  
1960  
+30  
13  
Operational Bandwidth  
Test Frequency  
Output Channel Power  
Power Gain  
Input Return Loss  
Output Return Loss  
ACLR  
IMD3 @ +30 dBm PEP  
PIN_VPD Current, Ipd  
Operating Current, Icc  
Collector Efficiency  
Output P1dB  
MHz  
MHz  
dBm  
dB  
800  
2200  
940  
+30  
17  
2140  
+30  
11.8  
10  
8.2  
-50  
-51  
246  
14.6  
2140  
+30  
11.8  
10  
11  
13  
7.5  
-49  
-52  
230  
15.5  
5.5  
-52  
-52  
217  
16.6  
dB  
dB  
8.2  
dBc  
dBc  
mA  
mA  
%
-50  
-51  
4
246  
14.6  
+38.2  
160  
+5  
dBm  
mA  
V
+38.5 +38.5 +38.2  
160  
+5  
+28  
dBm  
mA  
V
Vcc  
V
Quiescent Current, Icq  
Vpd, Vbias  
Notes:  
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR  
performance at +25° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 160 mA to  
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the  
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More  
information is given in the other parts of this datasheet.  
Vcc  
V
+28  
2. The AP603 evaluation board has been tested for ruggedness to be capable of handling:  
7:1 VSWR @ +28 Vcc, 2140 MHz, 5.5W CW Pout,  
Absolute Maximum Rating  
5:1 VSWR @ +30 Vcc, 2140 MHz, 5.5W CW Pout,  
3:1 VSWR @ +32 Vcc, 2140 MHz, 5.5W CW Pout.  
Parameter  
Storage Temperature, Tstg  
Rating  
-55 to +125 ºC  
Ordering Information  
Junction Temperature, TJ  
192 ºC  
For 106 hours MTTF  
Part No.  
Description  
RF Input Power (CW tone), Pin  
Breakdown Voltage C-B, BVCBO  
Breakdown Voltage C-E, BVCEO  
Quiescent Bias Current, ICQ  
Power Dissipation, PDISS  
Input P6dB  
80 V @ 0.1 mA  
51 V @ 0.1 mA  
320 mA  
AP603-F  
High Dynamic Range 28V 7W HBT Amplifier  
AP603-PCB900 920-960 MHz Evaluation board  
AP603-PCB1960 1930-1990 MHz Evaluation board  
AP603-PCB2140 2110-2170 MHz Evaluation board  
9.5 W  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice  
Page 1 of 14 May 2007 ver 1  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com  

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