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AM27C256-255 PDF预览

AM27C256-255

更新时间: 2024-01-12 01:48:21
品牌 Logo 应用领域
超微 - AMD 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
12页 94K
描述
256 Kilobit (32,768 x 8-Bit) CMOS EPROM

AM27C256-255 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP28,.6
针数:28Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.7Is Samacsys:N
最长访问时间:250 nsI/O 类型:COMMON
JESD-30 代码:R-PDIP-T28JESD-609代码:e0
长度:37.084 mm内存密度:262144 bit
内存集成电路类型:OTP ROM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP28,.6
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:12.75 V
认证状态:Not Qualified座面最大高度:5.715 mm
最大待机电流:0.0001 A子类别:OTP ROMs
最大压摆率:0.025 mA最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15.24 mmBase Number Matches:1

AM27C256-255 数据手册

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FINAL  
Advanced  
Micro  
Am27C256  
256 Kilobit (32,768 x 8-Bit) CMOS EPROM  
Devices  
DISTINCTIVE CHARACTERISTICS  
Fast access time  
Latch-up protected to 100 mA from –1 V to  
VCC + 1 V  
55 ns  
High noise immunity  
Low power consumption  
Versatile features for simple interfacing  
20 µA typical CMOS standby current  
JEDEC-approved pinout  
— Both CMOS and TTL input/output  
compatibility  
Single +5 V power supply  
— Two line control functions  
±10% power supply tolerance available  
100% Flashrite programming  
— Typical programming time of 4 seconds  
Standard 28-pin DIP, PDIP, 32-pin TSOP and  
PLCC packages  
GENERAL DESCRIPTION  
The Am27C256 is a 256K-bit ultraviolet erasable pro-  
grammable read-only memory. It is organized as 32K  
words by 8 bits per word, operates from a single +5 V  
supply, has a static standby mode, and features fast sin-  
gle address location programming. Products are avail-  
ableinwindowedceramicDIPpackagesaswellasplas-  
tic one time programmable (OTP) PDIP, TSOP, and  
PLCC packages.  
controls, thus eliminating bus contention in a multiple  
bus microprocessor system.  
AMD’s CMOS process technology provides high speed,  
low power, and high noise immunity. Typical power con-  
sumption is only 80 mW in active mode, and 100 µW in  
standby mode.  
All signals are TTL levels, including programming sig-  
nals. Bit locations may be programmed singly, in blocks,  
or at random. The Am27C256 supports AMD’s Flashrite  
programming algorithm (100 µs pulses) resulting in typi-  
cal programming time of 4 seconds.  
Typically, any byte can be accessed in less than 55 ns,  
allowing operation with high-performance microproces-  
sors without any WAIT states. The Am27C256 offers  
separate Output Enable (OE) and Chip Enable (CE)  
BLOCK DIAGRAM  
Data Outputs  
DQ0–DQ7  
V
V
V
CC  
SS  
PP  
Output Enable  
Chip Enable  
and  
OE  
CE  
Output  
Buffers  
Prog Logic  
Y
Y
Decoder  
Gating  
A0–A14  
Address  
Inputs  
262,144  
Bit Cell  
Matrix  
X
Decoder  
08007H-1  
Publication# 08007 Rev. H Amendment/0  
Issue Date: May 1995  
2-32  

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