AH312 / ECP200G
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Product Features
Product Description
Functional Diagram
The AH312 / ECP200 is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve high performance for
various narrowband-tuned application circuits with up to
+49 dBm OIP3 and +33 dBm of compressed 1dB power. It
is housed in a lead-free/green/RoHS-compliant SOIC-8
package. All devices are 100% RF and DC tested.
• 400 – 2300 MHz
• +33 dBm P1dB
• +51 dBm Output IP3
• 18 dB Gain @ 900 MHz
• 11 dB Gain @ 1960 MHz
• Single Positive Supply (+5V)
1
8
7
6
5
2
3
4
The AH312 / ECP200 is targeted for use as a driver
amplifier in wireless infrastructure where high linearity and
medium power is required. An internal active bias allows
the AH312 to maintain high linearity over temperature and
operate directly off a single +5V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
• Lead-free/green/RoHS-compliant
Function
Vref
Pin No.
SOIC-8 SMT Pkg.
1
3
Input
Output
Vbias
6, 7
8
Applications
GND
Backside Paddle
2, 4, 5
• Final stage amplifiers for Repeaters
• Mobile Infrastructure
N/C or GND
• Defense / Homeland Security
Specifications (1)
Typical Performance (4)
Parameter
Operational Bandwidth
Test Frequency
Gain
Units Min Typ Max
Parameter
Units
Typical
MHz
MHz
dB
400
2300
Frequency
MHz
dB
900
18
-18
-11
+33
+49
1960
11
2140
10
S21 – Gain
2140
10
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
Output IP3
dB
dB
dBm
dBm
dBm
-19
-20
9
-6.8
+33.4
+51
-6.8
+33.2
+48
Input R.L.
dB
dB
20
Output R.L.
6.8
Output P1dB
dBm
dBm
+32
+47
+33.2
+48
Output IP3 (2)
IS-95A Channel Power
+27
+27.5
@ -45 dBc ACPR
IS-95A Channel Power
dBm
+27.5
W-CDMA Channel Power
@ -45 dBc ACPR, 1960 MHz
dBm
dB
+25.3
7.7
@ -45 dBc ACLR
W-CDMA Channel Power
dBm
dB
+25.3
Noise Figure
8.0
7.3
@ -45 dBc ACLR, 2140 MHz
Device Bias (3)
+5 V @ 800 mA
Noise Figure
7.7
800
+5
Operating Current Range, Icc (3) mA
700
900
4. Typical parameters reflect performance in a tuned application circuit at +25° C.
Device Voltage, Vcc
V
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin
1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
22mA of current when used with a series bias resistor of R1=15Ω. (ie. total device current
typically will be 822 mA.)
Ordering Information
Absolute Maximum Rating
Part No.
Description
(lead-tin SOIC-8 Pkg)
Parameter
Rating
-40 to +85 °C
-65 to +150 °C
+28 dBm
+8 V
2 Watt, High Linearity InGaP HBT Amplifier
AH312-S8*
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
2 Watt, High Linearity InGaP HBT Amplifier
ECP200G*
(lead-tin SOIC-8 Pkg)
2 Watt, High Linearity InGaP HBT Amplifier
AH312-S8G
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
Device Current
1400 mA
8 W
AH312-S8PCB900
AH312-S8PCB1960
AH312-S8PCB2140
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Device Power
Junction Temperature
+250 °C
*
This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
Page 1 of 9 June 2005
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